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首页> 外文期刊>Japanese journal of applied physics >Interface properties of SiO_2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He
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Interface properties of SiO_2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

机译：化学气相沉积形成的SiO_2 / GaN结构的界面特性，其中远端氧等离子体与Ar或He混合

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摘要

The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance-voltage (C-V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C-V curves even after post deposition annealing at 800 degrees C. Besides, we found that the current density-oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case. (C) 2018 The Japan Society of Applied Physics
机译：系统地研究了稀有气体物种（Ar和He）对通过远程氧等离子体增强化学气相沉积（ROPE-CVD）方法形成的SiO2 / GaN结构形成的影响。原子力显微镜显示，与Ar相比，使用He进行ROPE-CVD可使SiO2表面光滑。我们发现在Ar和He的情况下SiO2沉积后，没有观察到GaN表面的明显氧化。通过ROPE-CVD用Ar和He稀释液形成的GaN MOS电容器的电容-电压（CV）曲线显示出良好的界面特性，没有滞后现象，即使在800摄氏度的沉积后退火之后，也与理想CV曲线良好吻合。 ，我们发现电流密度-氧化物电场特性显示，在Ar情况下，栅极泄漏电流低于He情况。 （C）2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第6s3期|06KA01.1-06KA01.7|共7页
  • 作者

    Nguyen Xuan Truyen; Taoka Noriyuki; Ohta Akio; Makihara Katsunori; Yamada Hisashi; Takahashi Tokio; Ikeda Mitsuhisa; Shimizu Mitsuaki; Miyazaki Seiichi;

  • 作者单位

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Natl Inst Adv Ind Sci & Technol, GaN Adv Device Open Innovat Lab GaN OIL, Nagoya, Aichi 4648601, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Natl Inst Adv Ind Sci & Technol, GaN Adv Device Open Innovat Lab GaN OIL, Nagoya, Aichi 4648601, Japan;

    Natl Inst Adv Ind Sci & Technol, GaN Adv Device Open Innovat Lab GaN OIL, Nagoya, Aichi 4648601, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

    Natl Inst Adv Ind Sci & Technol, GaN Adv Device Open Innovat Lab GaN OIL, Nagoya, Aichi 4648601, Japan;

    Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan;

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