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首页> 外文期刊>Japanese journal of applied physics >Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method
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Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method

机译：Na助熔剂法中使用气态甲烷提高GaN晶体的生长速率

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摘要

In the growth of GaN using the Na flux method, the addition of graphite to the flux enables us to suppress the formation of GaN polycrystals generated around the gas-liquid interface and to increase the growth rate of GaN on a seed. To increase the growth rate further, high nitrogen pressure conditions are used. However, polycrystals are easily generated even if graphite is added. In this study, we first applied methane gas as a carbon source in order to increase the carbon concentration around the gas-liquid interface and to suppress polycrystal formation, even at high nitrogen pressures. As a result, polycrystal formation was suppressed completely at nitrogen pressures as high as 5.0 MPa, by using methane gas, resulting in the highest growth rate of more than 60 mu m/h in the c-direction among the crystals grown by the Na flux method. (C) 2017 The Japan Society of Applied Physics
机译：在使用Na助熔剂法生长GaN的过程中，向助熔剂中添加石墨使我们能够抑制在气液界面周围生成的GaN多晶的形成，并提高GaN在晶种上的生长速率。为了进一步提高生长速度，使用了高氮气压力条件。但是，即使添加石墨，也容易产生多晶。在这项研究中，我们首先使用甲烷气作为碳源，以提高气液界面周围的碳浓度并抑制多晶的形成，即使在高氮气压力下也是如此。结果，通过使用甲烷气体，在高达5.0 MPa的氮气压力下，多晶的形成被完全抑制了，导致在Na助熔剂生长的晶体中，c方向的最高生长速率超过60μm / h。方法。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第5期|055502.1-055502.4|共4页
  • 作者

    Murakami Kosuke; Ogawa Shogo; Imanishi Masayuki; Imade Mamoru; Maruyama Mihoko; Yoshimura Masashi; Mori Yusuke;

  • 作者单位

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan;

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