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首页> 外文期刊>Japanese journal of applied physics >Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control
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Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

机译：通过基于虚拟计量的晶圆对晶圆控制解决等离子蚀刻中关键尺寸随时间的漂移

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摘要

As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R-2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three sigma of CD across wafer is improved from the range (1.3-2.9nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry. (C) 2017 The Japan Society of Applied Physics
机译：随着半导体器件缩小到20 nm以下，等离子蚀刻的工艺窗口变得非常小，因此工艺漂移或移位变得更加明显。这项研究解决了由于消耗性零件随时间流逝而引起的典型工艺漂移问题之一，并通过使用基于虚拟计量（VM）的晶圆间控制技术提供了可行的解决方案。由于喷淋头的腐蚀具有中心到边缘的面积依赖性，因此晶圆中心和边缘区域的临界尺寸（CD）会随着时间而反转。该CD趋势是通过偏最小二乘（PLS）模型在晶圆间成功地估计的，该模型结合了来自光发射光谱（OES），VI探针和设备状态仪的变量。 PLS模型的R-2达到0.89，其预测性能在批量生产线中得到确认。结果，该模型可以用作VM进行晶片间控制。使用虚拟机，可以实施高级过程控制（APC）策略来解决CD漂移问题。整个晶圆的CD的三个西格玛从（1.3-2.9nm）范围提高到（0.79-1.7nm）范围。希望本文介绍的结果将有助于加快基于VM的APC战略在半导体行业中的实施。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第6期|066502.1-066502.6|共6页
  • 作者

    Lee Ho Ki; Baek Kye Hyun; Shin Kyoungsub;

  • 作者单位

    Samsung Elect Co Ltd, Semicond R&D Ctr, Hwaseong 18448, Gyeonggi, South Korea;

    Samsung Elect Co Ltd, Semicond R&D Ctr, Hwaseong 18448, Gyeonggi, South Korea;

    Samsung Elect Co Ltd, Semicond R&D Ctr, Hwaseong 18448, Gyeonggi, South Korea;

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