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首页> 外文期刊>Japanese journal of applied physics >Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs
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Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs

机译：NO退火中SiC / SiO2界面氮化和氧化反应的研究及其对SiC MOSFET迁移率的定量影响建模

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Nitridation and oxidation reactions at SiC/SiO2 interfaces during NO annealing were investigated and their quantitative impacts on the channel mobility were modeled. We evaluated the NO annealing condition dependence of nitrogen atom concentration at the SiC/SiO2 interfaces ([N]) and increased oxide thickness (Delta T-OX), as indices of the nitridation and oxidation reactions, respectively. By using the obtained [N] and Delta T-OX, the experimental mobility was well reproduced in an empirical formula. This empirical formula enables evaluation of the quantitative impact of the nitridation and oxidation reactions on the mobility. From the empirical formula, it was expected that the mobility would be further increased by lowering the annealing temperature from the investigated temperature range. However, an exponential increase in both NO gas consumption and processing time is also predicted, which leads to the conclusion that the further decrease in annealing temperature would be impracticable. (C) 2017 The Japan Society of Applied Physics
机译：研究了NO退火过程中SiC / SiO2界面的氮化和氧化反应，并模拟了其对沟道迁移率的定量影响。我们评估了SiC / SiO2界面上的氮原子浓度（[N]）和增加的氧化物厚度（Delta T-OX）的NO退火条件依赖性，分别作为氮化和氧化反应的指标。通过使用获得的[N]和Delta T-OX，以实验公式很好地再现了实验迁移率。该经验公式能够评估氮化和氧化反应对迁移率的定量影响。根据经验公式，可以预期，通过从研究的温度范围降低退火温度，可以进一步提高迁移率。但是，还预测了NO气体消耗量和处理时间都将呈指数增长，这导致了不进一步降低退火温度的结论。 （C）2017日本应用物理学会

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    《Japanese journal of applied physics》 |2017年第10期|106502.1-106502.4|共4页
  • 作者

    Ohashi Teruyuki; Nakabayashi Yukio; Shimizu Tatsuo; Takao Kazuto; Iijima Ryosuke;

  • 作者单位

    Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan;

    Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan;

    Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan;

    Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan;

    Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan;

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