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首页> 外文期刊>Japanese journal of applied physics >Nonlinear polarization responses of ZrO_2-based thin films fabricated by chemical solution deposition
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Nonlinear polarization responses of ZrO_2-based thin films fabricated by chemical solution deposition

机译：化学溶液沉积法制备ZrO_2基薄膜的非线性极化响应

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The nonlinear polarization responses of ZrO2-based thin films were investigated. Y, Ce, Ti, and Sn were used as substitutes in ZrO2 thin films by chemical solution deposition. A pure ZrO2 film and the ZrO2 film with 1% Y substitution showed constricted polarization-electric field (P-E) curves. In contrast, the ZrO2 film with 5% Y substitution showed a linear P-E curve. The dielectric constants of the pure ZrO2 film and the ZrO2 film with 1% Y substitution increased by 7 and 11%, respectively, under an applied electric field of 2.5 MV/cm. The nonlinearity of the polarization responses was decreased by Ce substitution and Ti substitution. The ZrO2 films with Sn substitution showed narrow P-E curves. The dielectric constant of the ZrO2 film with 10% Sn substitution increased by 13% under an applied electric field of 3 MV/cm. These dielectric constant increases originate from electric-field-induced phase transitions of ZrO2-based thin films. (C) 2017 The Japan Society of Applied Physics
机译：研究了ZrO2基薄膜的非线性极化响应。通过化学溶液沉积法，将Y，Ce，Ti和Sn用作ZrO2薄膜的替代物。纯ZrO2膜和1％Y取代的ZrO2膜显示出狭窄的极化电场（P-E）曲线。相比之下，Y取代度为5％的ZrO2膜显示线性P-E曲线。在2.5 MV / cm的施加电场下，纯ZrO2膜和ZrO2膜（具有1％的Y取代）的介电常数分别增加了7％和11％。 Ce替换和Ti替换降低了偏振响应的非线性。锡取代的ZrO2薄膜显示出窄的P-E曲线。在3 MV / cm的施加电场下，具有10％锡取代的ZrO2薄膜的介电常数提高了13％。这些介电常数的增加源自电场引起的基于ZrO2的薄膜的相变。 （C）2017日本应用物理学会

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