Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors

Saitoh Masumi; Ota Kensuke; Tanaka Chika; Numata Toshinori

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Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors

机译：三栅极硅纳米线晶体管中低频噪声的通道大小依赖性

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We systematically study the channel size dependence of drain current noise amplitude in tri-gate silicon nanowire transistors (NW Tr.) by measuring a large number of samples with various parameters such as gate length (L-g), NW width (W-NW), and NW height (H-NW) down to 10 nm. The noise of NW Tr. with W-NW < 20nm rapidly increases with 1/W-NW because an electron in a single trap on the NW channel blocks the entire current flow (bottleneck effects). The strength of bottleneck effects is determined solely by W-NW not by H-NW. The noise increase at narrow W-NW is smaller in short-L-g Tr. (down to 15 nm). (c) 2015 The Japan Society of Applied Physics

机译：我们通过测量大量具有各种参数（例如栅极长度（Lg），NW宽度（W-NW））的样本，系统地研究了三栅极硅纳米线晶体管（NW Tr。）中漏极电流噪声幅度的沟道尺寸依赖性。和NW高度（H-NW）降至10 nm。 NW Tr的噪声。 W / NW <20nm时，1 / W-NW会迅速增加，因为NW通道上单个陷阱中的电子会阻塞整个电流（瓶颈效应）。瓶颈效应的强度仅由W-NW决定，而不由H-NW决定。在短的L-g Tr中，窄W-NW处的噪声增加较小。（低至15 nm）。（c）2015年日本应用物理学会

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《Japanese journal of applied physics》 |2015年第4期|044201.1-044201.3|共3页
作者
Saitoh Masumi; Ota Kensuke; Tanaka Chika; Numata Toshinori;
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Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan;

Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan;

Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan;

Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan;

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3. Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Ke Mao, Tomoko Mizutani, Anil Kumar, Japanese journal of applied physics . 2012,第2Issue2期

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Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors

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