...
首页> 外文期刊>Japanese journal of applied physics >Acoustic properties of co-doped AlN thin films at low temperatures studied by picosecond ultrasonics
【24h】

Acoustic properties of co-doped AlN thin films at low temperatures studied by picosecond ultrasonics

机译:皮秒超声研究共掺杂AlN薄膜在低温下的声学特性

获取原文
获取原文并翻译 | 示例
           

摘要

(Mg0.5Zr0.5)(x)Al1-xN and (Mg0.5Hf0.5)(x)Al1-xN thin films are AlN-base piezoelectric materials, and their piezoelectric coefficients are higher than those of pure AlN, being promising materials for acoustic devices. However, their acoustic properties remain unknown because of measurement difficulty for deposited thin films. In this study, we measure their longitudinal-wave elastic constants C-33 and their temperature coefficients using picosecond ultrasound spectroscopy for 0 < x < 0.13; we obtain C-33 = 398.2 +/- 0.7 GPa for pure AlN, and it largely decreases by doping Mg, Zr, and Hf, leading to a minimum values of 316.8 +/- 1.6 GPa for (Mg0.5Zr0.5)(0.126)Al0.874N. (C) 2015 The Japan Society of Applied Physics
机译:(Mg0.5Zr0.5)(x)Al1-xN和(Mg0.5Hf0.5)(x)Al1-xN薄膜是基于AlN的压电材料,其压电系数高于纯AlN的压电系数,这是有希望的声学设备的材料。然而,由于沉积薄膜的测量困难,它们的声学性质仍然未知。在这项研究中,我们使用皮秒超声光谱法在0

著录项

  • 来源
    《Japanese journal of applied physics》 |2015年第7s1期|07HD01.1-07HD01.4|共4页
  • 作者单位

    Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan.;

    Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan.;

    Taiyo Yuden Co Ltd, Akashi, Hyogo 6748555, Japan.;

    Taiyo Yuden Co Ltd, Akashi, Hyogo 6748555, Japan.;

    Taiyo Yuden Co Ltd, Akashi, Hyogo 6748555, Japan.;

    Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan.;

    Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan.;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号