Nature of yellow luminescence band in GaN grown on Si substrate

著录项

• 来源
  《Japanese journal of applied physics》 |2014年第11s期|11RC02.1-11RC02.5|共5页
• 作者

  Shogo Ito; Taihei Nakagita; Nobuhiko Sawaki; Hyung Soo Ahn; Masashi Irie; Toshiki Hikosaka; Yoshio Honda; Masahito Yamaguchi; Hiroshi Amano;

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• 作者单位

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan;

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan;

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan;

  Department of Applied Sciences, Korea Maritime and Ocean University, Busan 606-791, Korea;

  Department of Electronics and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

  Department of Electronics and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

  Department of Electronics and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

  Department of Electronics and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

  Department of Electronics and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

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• 正文语种 eng
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