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Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate

机译:热清洗对Ge(110)衬底上外延Ni锗化物层形成的影响

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摘要

We have investigated the formation and crystalline structure of a partially epitaxial NiGe layer on a Ge(110) substrate without and with thermal cleaning, with which native Ge oxide is removed before Ni deposition. We found that a native oxide layer formed on a Ge surface affects the competitive growth of epitaxial and polycrystalline domains in an annealing temperature range from 200 to 550℃, and also affects the crystalline orientation relationships between epitaxial domains of NiGe and Ge(110) substrate. For the samples with a native oxide layer, low temperature favors the growth of epitaxial domains, while high temperature favors the growth of polycrystalline domains. On the other hand, for the samples without a native oxide layer, the growth of epitaxial domains is coincident with that of polycrystalline domains. The growths of polycrystalline and epitaxial domains are restrained at low temperature, and they grow together at high temperature. For the samples with a native oxide layer, the orientation relationships of epitaxial domains are NiGe(102)//Ge(110) and NiGe[010]//Ge[001], while those are NiGe(100)//Ge(110) and NiGe[001]//Ge[001] for the samples without a native oxide layer.
机译:我们已经研究了在不使用和进行热清洗的情况下,在Ge(110)衬底上部分外延NiGe层的形成和晶体结构,其中在沉积Ni前先去除了天然Ge氧化物。我们发现,在200至550℃的退火温度范围内,形成于Ge表面的天然氧化物层会影响外延和多晶域的竞争性生长,并且还会影响NiGe和Ge(110)衬底的外延域之间的晶体取向关系。 。对于具有天然氧化物层的样品,低温有利于外延畴的生长,而高温有利于多晶畴的生长。另一方面,对于没有天然氧化物层的样品,外延畴的生长与多晶畴的生长一致。多晶域和外延域的生长在低温下受到抑制,而它们在高温下一起生长。对于具有天然氧化物层的样品,外延畴的取向关系为NiGe(102)// Ge(110)和NiGe [010] // Ge [001],而外延畴的取向关系为NiGe(100)// Ge(110) )和NiGe [001] // Ge [001]用于没有天然氧化物层的样品。

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  • 来源
    《Japanese journal of applied physics》 |2014年第5s2期|05GA06.1-05GA06.6|共6页
  • 作者单位

    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

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