...
机译:热清洗对Ge(110)衬底上外延Ni锗化物层形成的影响
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
机译:Ni锗化物/ Ge(110)触头的外延形成和电性能
机译:反应沉积在Ge(001)衬底上外延形成锗化镍
机译:薄外延Ge-on-Si衬底上的NiGe中氢(H)离子簇射掺杂抑制锗锗(NiGe)的团聚和Ni的渗透
机译:纳米尺度GE MOSFET掺杂GE-SI基板上Ni Emeriande的层间介电覆盖效应
机译:在锗(001)衬底上生长外延锗(1-y)碳(y)层期间的碳结合。
机译:各种清洗方法对水基缓冲层浸涂Ni-5%W衬底的影响:X射线光电子能谱研究
机译:通过溶胶 - 凝胶工艺在双轴纹理 - Ni(100)基材上的YB2O3缓冲层外延生长
机译:溶胶 - 凝胶法在双轴织构Ni(100)衬底上外延生长Y(sub 2 / sub O / sub 3)缓冲层