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首页> 外文期刊>Japanese journal of applied physics >Novel Silicon-on-lnsulator Lateral Power Device with Partial Oxide Pillars in the Drift Region
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Novel Silicon-on-lnsulator Lateral Power Device with Partial Oxide Pillars in the Drift Region

机译:漂移区中具有部分氧化物柱的新型绝缘体上硅横向功率器件

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摘要

In this paper, a novel silicon-on-insulator (SOI) lateral power device with partial oxide pillars in the drift region is proposed and investigated using a three dimensional device simulator. The structure is characterized by the alternate doped silicon pillars and oxide pillars in the drift region, which can be fabricated by the dielectric isolation process without any additional mask. Owing to the modulation of the oxide pillars, a new additional electric field peak is introduced in the middle of the drift region, thus reducing the surface electric field peaks and transferring the breakdown location. Compared with the conventional reduced surface field (RESURF) device, a 21.5% increase in the breakdown voltage and a 50% increase in the figure of merit (FOM) are obtained in the novel device.
机译:本文提出了一种新型的绝缘体上硅(SOI)横向功率器件,该器件在漂移区具有部分氧化物柱,并使用三维器件仿真器进行了研究。该结构的特征在于漂移区中交替的掺杂硅柱和氧化物柱,可以通过介电隔离工艺制造它们,而无需任何额外的掩模。由于氧化柱的调制,在漂移区的中间引入了一个新的附加电场峰,从而减少了表面电场峰并转移了击穿位置。与传统的减小表面场(RESURF)器件相比,该新颖器件的击穿电压提高了21.5%,品质因数(FOM)提高了50%。

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  • 来源
    《Japanese journal of applied physics》 |2013年第1issue1期|014302.1-014302.5|共5页
  • 作者单位

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210003, China;

    Department of Computer Science and Information Engineering, Asia University, Taichung 41354, Taiwan;

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  • 正文语种 eng
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