Highly Selective Etching of SiO_2 over Si_3N_4 and Si in Capacitively Coupled Plasma Employing C_5HF_7 Gas

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• 来源
  《Japanese journal of applied physics》 |2013年第1issue1期|016201.1-016201.9|共9页
• 作者

  Yudai Miyawaki; Yusuke Kondo; Makoto Sekine; Kenji Ishikawa; Toshio Hayashi; Keigo Takeda; Hiroki Kondo; Atsuyo Yamazaki; Azumi Ito; Hirokazu Matsumoto; Masaru Hori;

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• 作者单位

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

  Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan;

  Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan;

  Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan;

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

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• 正文语种 eng
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