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首页> 外文期刊>Japanese journal of applied physics >Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method
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Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method

机译：化学溶液沉积法制备均质晶圆级介电薄膜的研究

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摘要

Process parameters of lead zirconate titanate thin film preparation using metal organic decomposition method were optimized by a statistical method and their effects on the film properties were investigated quantitatively in this study. The crystallization temperature and the precursor formation temperature were found to be important factors for high quality thin films. We also investigated the films deposited on the 4-in. wafer under the optimum conditions and found that it exhibited great film properties. Furthermore, the process damage to the wafer sample by photolithography was clarified experimentally. The results will be useful for the fabrication of the MEMS devices and integration technology of electrical devices including piezoelectric films.
机译：通过统计方法优化了金属有机分解法制备钛酸锆钛酸铅薄膜的工艺参数，并定量研究了其对膜性能的影响。发现结晶温度和前体形成温度是高质量薄膜的重要因素。我们还研究了沉积在4英寸上的薄膜。晶片在最佳条件下发现其具有出色的膜性能。此外，实验证明了通过光刻对晶片样品的工艺损伤。该结果对于MEMS器件的制造和包括压电膜的电子器件的集成技术将是有用的。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue2期|06GL09.1-06GL09.5|共5页
  • 作者

    Kazutaka Sueshige; Masaaki Ichiki; Tadatomo Suga; Toshihiro Itoh;

  • 作者单位

    Department of Precision Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan,PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0076, Japan;

    Department of Precision Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan;

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