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首页> 外文期刊>Japanese journal of applied physics >Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition
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Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

机译：使用多空心放电等离子体化学气相沉积的组合沉积微晶硅膜

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摘要

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH_3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality μc-Si:H films becomes quite narrower for the higher gas pressure.
机译：通常使用等离子体化学气相沉积（CVD）的高压耗尽方法以高沉积速率沉积缺陷密度低的氢化微晶硅（μc-Si：H）膜。为了了解用于高压耗尽法的μc-Si：H膜的合适沉积条件，使用多空心放电等离子体CVD方法以组合方式沉积Si膜，通过该方法可以改变H和SiH_3自由基的通量及其通量比与放电的距离。较高的气压带来较高的沉积速率，而对于较高的气压，器件质量μc-Si：H薄膜的工艺窗口变得非常狭窄。

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  • 来源
    《Japanese journal of applied physics》 |2012年第1issue2期|p.01AD02.1-01AD02.4|共4页
  • 作者

    Kazunori Koga; Takeaki Matsunaga; Yeonwon Kim; Kenta Nakahara; Daisuke Yamashita; Hidefumi Matsuzaki; Kunihiro Kamataki; Giichiro Uchida; Naho Itagaki; Masaharu Shiratani;

  • 作者单位

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Center for Research and Advancement in Higher Education, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

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