Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

Elif Turan; Gokhan Yilmaz; Vladimir Smirnov; Friedhelm Finger; Mehmet Guenes

首页> 外文期刊>Japanese journal of applied physics >Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

【24h】

Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

机译：水中硅薄膜的快速可逆降解

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Metastability effects in amorphous and microcrystalline silicon thin films induced by exposure to atmospheric gases and water are investigated. A simple procedure is described which allows studying such effects in a reproducible and reliable manner on a short time scale. The method is applied to thin film silicon materials with different structure composition ranging from amorphous to highly crystalline. It is shown that the materials can be brought back into a well defined state even after pro-longed and repeated degradation cycles.

机译：研究了由于暴露于大气和水而在非晶和微晶硅薄膜中引起的亚稳态效应。描述了一种简单的过程，该过程允许在短时间内以可再现和可靠的方式研究此类效应。该方法适用于具有从非晶态到高度结晶性的不同结构组成的薄膜硅材料。结果表明，即使经过长时间和反复的降解循环，材料也可以恢复到良好的状态。

著录项

来源
《Japanese journal of applied physics》 |2012年第7issue1期|p.070210.1-070210.3|共3页
作者
Elif Turan; Gokhan Yilmaz; Vladimir Smirnov; Friedhelm Finger; Mehmet Guenes;
展开▼
作者单位

IEK-5 Photovoltaik, Forschungszentrum Julich, 52425 Julich, Germany,Department of Physics, Mugla University, Kotekli Yerleskesi, 48000 Mugla, Turkey;

IEK-5 Photovoltaik, Forschungszentrum Julich, 52425 Julich, Germany,Department of Physics, Mugla University, Kotekli Yerleskesi, 48000 Mugla, Turkey;

IEK-5 Photovoltaik, Forschungszentrum Julich, 52425 Julich, Germany;

IEK-5 Photovoltaik, Forschungszentrum Julich, 52425 Julich, Germany;

Department of Physics, Mugla University, Kotekli Yerleskesi, 48000 Mugla, Turkey;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Large enhancement of ultra-violet photoresponse of silicon-nanoparticle-embedded porous silicon thin films by rapid-thermal-oxidation treatment [J] . Wu Kuen-Hsien, Li Chong-Wei, Liu Jung-Hsuan Microelectronic Engineering . 2015,第DECa1期

机译：通过快速热氧化处理大大增强了嵌入纳米颗粒的多孔硅薄膜的紫外光响应
2. Investigating poh silicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell [J] . Ian Brazil, Martin A. Green Journal of materials science . 2010,第10期

机译：研究玻璃太阳能电池上薄膜晶体硅的快速热退火过程中的硅薄膜结构变化
3. Investigating polysilicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell [J] . Ian Brazil, Martin A. Green Journal of Materials Science: Materials in Electronics . 2010,第10期

机译：研究玻璃太阳能电池上薄膜晶体硅的快速热退火过程中的多晶硅薄膜结构变化
4. Argon Plasma Treatment at the i-/p-Interface in Silicon Thin-Film Solar Cells and its Influence on the Light Induced Degradation [C] . Alex Neumuller, Oleg Sergeev, Martin Vehse EMRS Meeting on Advanced Inorganic Materials and Structures for Photovoltaics . 2016

机译：氩气等离子浆处理在硅薄膜太阳能电池中的I-/ P界面及其对光引起的降解的影响
5. Nucleation, epitaxial growth, and characterization of beta-silicon carbide thin films on silicon by rapid thermal chemical vapor deposition. [D] . Li, Jiping. 1994

机译：通过快速热化学气相沉积在硅上形成β-碳化硅薄膜的成核，外延生长和表征。
6. Impact of Light-Induced Degradation on the Performanceof Multijunction Thin-Film Silicon-Based Photoelectrochemical Water-SplittingDevices [O] . Félix Urbain, *, †, 2016

机译：光诱导降解对性能的影响结薄膜硅基光电化学水分解技术设备
7. EFFECT OF RAPID THERMAL TREATMENT CONDITIONS ON ELECTROPHYSICAL PROPERTIES OF CROMIUM THIN FILMS ON SILICON [O] . J. A. Solovjov, V. A. Pilipenko 2019

机译：快速热处理条件对硅铬薄膜电神理性质的影响
8. Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SiO2 Films onSilicon [R] . Polar, J. C., Irene, E. A. 1992

机译：预氧化退火动力学：硅上薄siO2薄膜的界面降解

Rapid Reversible Degradation of Silicon Thin Films by a Treatment in Water

摘要

著录项

相似文献

相关主题

期刊订阅