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首页> 外文期刊>Japanese journal of applied physics >Fabrication of 100-Oriented (Na_(0.5)K_(0.5))NbO_3-BaZrO_3-(Bi_(0.5)Li_(0.5)TiO_3 Films on Si Substrate Using LaNiO_3 Layer
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Fabrication of 100-Oriented (Na_(0.5)K_(0.5))NbO_3-BaZrO_3-(Bi_(0.5)Li_(0.5)TiO_3 Films on Si Substrate Using LaNiO_3 Layer

机译：使用LaNiO_3层在Si衬底上制备100取向（Na_（0.5）K_（0.5））NbO_3-BaZrO_3-（Bi_（0.5）Li_（0.5）TiO_3膜

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摘要

0.92(Na_(0.5)K_(0.5))NbO_3-0.06BaZrO_3-0.02(Bi_(0.5)Li_(0.5))TiO_3 (NKN-BZ-BLT) thin films were fabricated by pulsed laser deposition (PLD) on a (100)Sisubstrate on which a 100-oriented LaNiO_3 (LNO) bottom layer was fabricated by the chemical solution deposition method. The NKN-BZ-BLT films were characterized by X-ray diffraction (XRD) analysis, θ/2θ scan and ψ-2θ/ω scan, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The properties were compared with those of the NKN-BZ-BLT film deposited on the (111)Pt/Ti/SiO_2/(100)Si substrate. We demonstrated that the LNO layer plays an important role in obtaining 100-oriented NKN-BZ-BLT films on the Si substrate. SEM surface and cross-sectional images showed that the NKN-BZ-BLT films fabricated at a substrate temperature of 800 ℃ had a high density and a relatively smooth surface. From the TEM image, this NKN-BZ-BLT film fabricated at 800 ℃ was composed of the columnar grains and some vertical-long pores could be observed. The energy dispersive X-ray (EDX) analysis showed that the LNO layer Is decomposed to La＿2NiO＿4 by its reaction with Nb. The dielectric properties showed that the NKN-BZ-BLT film on the LNO electrode had a small dielectric constant of 82, compared with the NKN-BZ-BLT film (ε_r = 3127) on the (111 )Pt/Ti/SiO_2/(100)Si substrate. This difference is due to the polarization direction of the film and the polarization axis of the NKN-BZ-BLT film on the LNO electrode exists in a direction perpendicular to the surface of the substrate. However, the NKN-BZ-BLT film on LNO showed a small P_r value. This is due to the dispersion of Ni from the LNO layer.
机译：在（100）上通过脉冲激光沉积（PLD）制备0.92（Na_（0.5）K_（0.5））NbO_3-0.06BaZrO_3-0.02（Bi_（0.5）Li_（0.5））TiO_3（NKN-BZ-BLT）薄膜。通过化学溶液沉积法在其上形成100取向LaNiO_3（LNO）底层的衬底。 NKN-BZ-BLT薄膜通过X射线衍射（XRD）分析，θ/2θ扫描和ψ-2θ/ω扫描，扫描电子显微镜（SEM）和透射电子显微镜（TEM）进行表征。将其性能与沉积在（111）Pt / Ti / SiO_2 /（100）Si衬底上的NKN-BZ-BLT膜的性能进行了比较。我们证明，LNO层在获得Si衬底上的100取向NKN-BZ-BLT膜方面起着重要作用。扫描电镜（SEM）的表面和横截面图像表明，在基板温度为800℃下制备的NKN-BZ-BLT膜具有高密度和相对光滑的表面。从TEM图像可以看出，这种NKN-BZ-BLT薄膜在800℃制备的薄膜由柱状晶粒组成，并可以观察到一些垂直长孔。能量色散X射线（EDX）分析表明，LNO层通过与Nb的反应而分解为La_2NiO_2。介电性能表明，与（111）Pt / Ti / SiO_2 /（（）上的NKN-BZ-BLT膜（ε_r= 3127）相比，LNO电极上的NKN-BZ-BLT膜具有小的介电常数82。 100）Si衬底。该差异是由于膜的偏振方向，并且LNO电极上的NKN-BZ-BLT膜的偏振轴在垂直于基板表面的方向上存在。但是，LNO上的NKN-BZ-BLT膜的P_r值较小。这是由于Ni从LNO层中分散出来的缘故。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LA06.1-09LA06.5|共5页
  • 作者

    Tomohiro Nakao; Seiji Yamazoe; Masaki Fukada; Kazuki Komaki; Toshinari Noda; Hideaki Adachi; Takahiro Wada;

  • 作者单位

    Department of Materials Chemistry, Ryukoku University, Otsu 520-2194, Japan;

    Department of Materials Chemistry, Ryukoku University, Otsu 520-2194, Japan,Department of Chemistry, School of Science, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

    Department of Materials Chemistry, Ryukoku University, Otsu 520-2194, Japan;

    Panasonic Corporation Industrial Devices Company, Kadoma, Osaka 571-8686, Japan;

    Panasonic Corporation Industrial Devices Company, Kadoma, Osaka 571-8686, Japan;

    Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;

    Department of Materials Chemistry, Ryukoku University, Otsu 520-2194, Japan;

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