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首页> 外文期刊>Japanese journal of applied physics >Epitaxial Growth of Silicon Films on SiO_2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition
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Epitaxial Growth of Silicon Films on SiO_2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition

机译：大气压化学气相沉积法在SiO_2图案化Si（100）衬底上外延生长硅膜

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摘要

In order to investigate the effect of selective area nucleation on epitaxial growth of silicon (Si) films, 35μm thick Si films were deposited by atmospheric pressure chemical vapor deposition (APCVD) under the standard condition on two kinds of SiO_2 patterned Si(100) wafers. One was circular patterns, and the other was striated patterns. Then, the structural properties of the as-deposited silicon thin films were investigated by metallurgical microscope, scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The results show that normal epitaxial growth occurs on the exposed Si(100) regions, while just polycrystalline Si deposition happens on the SiO_2 regions. Moreover, for the substrates with circular patterns, the as-deposited Si thin films possess pyramid surface morphology thus excellent light trapping performance being spontaneously formed, and the sizes of the pyramid grains approximately equal to the sum of the diameter and spacing of the round exposed Si regions.
机译：为了研究选择性成核对硅（Si）膜外延生长的影响，在两种条件下通过常压化学气相沉积（APCVD）在两种SiO_2图案化的Si（100）晶片上沉积了35μm厚的Si膜。 。一个是圆形图案，另一个是条纹图案。然后，通过冶金显微镜，扫描电子显微镜（SEM）和高分辨率透射电子显微镜（TEM）研究了沉积的硅薄膜的结构性能。结果表明，正常的外延生长发生在裸露的Si（100）区域，而只有多晶Si沉积发生在SiO_2区域。此外，对于具有圆形图案的基板，所沉积的Si薄膜具有金字塔的表面形态，因此自发地形成了优异的光捕获性能，并且金字塔晶粒的尺寸大约等于所暴露的圆形的直径和间距之和。硅地区。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MA02.1-09MA02.5|共5页
  • 作者

    Chunyan Duan; Youjun Deng; Bin Ai; Chao Liu; Lin Zhuang; Hui Shen;

  • 作者单位

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

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