An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors

Jaehoon Park; Lee-Mi Do; Christopher Pearson; Michael Petty; Dong Wook Kim; Jong Sun Choi

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An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors

机译：并五苯薄膜晶体管中源/漏对栅极重叠影响的实验研究

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The effects of the source/drain (S/D) to gate overlap on the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are reported. The S/D to gate overlap dimension was varied by adjusting the gate width, while the channel length and width were fixed. The threshold voltage was found to decrease on increasing the overlap dimension; in contrast, the field-effect mobility increased. These characteristic variations are explained on aspects of charge injection and transport properties in pentacene OTFTs, due to the presence of S/D to gate overlaps. The results demonstrate the significant effect of the overlap on the OTFT performance.

机译：报告了源极/漏极（S / D）到栅极的重叠对并五苯有机薄膜晶体管（OTFT）的电特性的影响。通过调整栅极宽度来改变S / D到栅极的重叠尺寸，同时固定沟道长度和宽度。发现阈值电压随着重叠尺寸的增加而降低；相反，场效应迁移率增加。这些特性的变化是由于并存栅极的S / D而在并五苯OTFT中的电荷注入和传输特性方面进行了解释。结果证明了重叠对OTFT性能的显着影响。

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《Japanese journal of applied physics》 |2012年第9issue3期|09MJ01.1-09MJ01.4|共4页
作者
Jaehoon Park; Lee-Mi Do; Christopher Pearson; Michael Petty; Dong Wook Kim; Jong Sun Choi;
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作者单位

IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea;

IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea;

School of Engineering and Computing Sciences, and Centre for Molecular and Nanoscale Electronics, Durham University, Durham DH1 3LE, U.K.;

School of Engineering and Computing Sciences, and Centre for Molecular and Nanoscale Electronics, Durham University, Durham DH1 3LE, U.K.;

Department of Electrical Information and Control Engineering, Hongik University, Seoul 121-791, Korea;

Department of Electrical Information and Control Engineering, Hongik University, Seoul 121-791, Korea;

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An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors

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