Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

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• 来源
  《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第2期|p.026504.1-026504.7|共7页
• 作者

  Naofumi Nakamura; Noriaki Oda; Eiichi Soda; Hajime Aoyama; Yuusuke Tanaka; Daisuke Kawamura; Nobuki Hosoi; Yukio Takigawa; Morio Shiohara; Seiichi Kondo; Ichiro Mori; Shuichi Saito;

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• 作者单位

  Toshiba Corporation, Yokohama 235-8522, Japan;

  NEC Energy Devices, Ltd., Sagamihara 252-5298, Japan;

  Renesas Electronics America Inc., Albany, NY 12203, U.S.A;

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan;

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan;

  Toshiba Corporation, Yokohama 235-8522, Japan;

  Renesas Electronics Corporation, Sagamihara 252-5298,Japan;

  Fujitsu Ltd., Ota, Tokyo 144-8588, Japan;

  Fujitsu Semiconductor Ltd., Kuwana, Mie 511-0118, Japan;

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan;

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan;

  Renesas Electronics Corporation, Chiyoda, Tokyo 100-0004,Japan;

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• 正文语种 eng
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