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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Effect of Series Resistance on Field-Effect Mobility at Varying Channel Lengths and Investigation into the Enhancement of Source/Drain Metallized Thin-Film Transistor Characteristics
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Effect of Series Resistance on Field-Effect Mobility at Varying Channel Lengths and Investigation into the Enhancement of Source/Drain Metallized Thin-Film Transistor Characteristics

机译：串联电阻对不同沟道长度场效应迁移率的影响以及源/漏金属化薄膜晶体管特性增强的研究

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摘要

The degradation in device performance due to parasitic resistance along the source and drain electrodes is a serious problem in thin-film transistor fabrication. The effect of this series resistance on the field-effect mobility has been discussed and solutions for the reduction of this unexpected resistance were studied in this work. From the derivation of the drain current, it was shown that the additional resistance had a greater influence on short-channel devices. The ratio of the series resistance to the channel resistance determined the amount of degradation to the field-effect mobility. A thin-film transistor using an aluminum-metallized source/drain was suggested; it showed an improvement in comparison with the conventional doped source/drain device, with a maximum mobility of 105 cm~- V~-1 s~-1. However, significant degradation of the mobility in the short-channel cases exposed the limitations of the structure. By employing doping for the source/drain metallized structure the maximum mobility reached a value of 150 cm~2 V~-1 s~-1. The decrease in the mobility caused by the channel length decrease was also improved. This study clearly explained the problem of additional resistance on the field-effect mobility of thin-film transistors and the achievements of a device using a self-aligned fabrication process with metallized electrodes.
机译：由于沿着源极和漏极的寄生电阻而导致的器件性能的下降是薄膜晶体管制造中的严重问题。已经讨论了该串联电阻对场效应迁移率的影响，并在这项工作中研究了减少这种意外电阻的解决方案。从漏极电流的推导可以看出，附加电阻对短沟道器件的影响更大。串联电阻与沟道电阻的比值决定了场效应迁移率的下降量。建议使用铝金属化的源极/漏极的薄膜晶体管。与传统的掺杂源极/漏极器件相比，它显示出了改进，最大迁移率为105 cm〜-V〜-1 s〜-1。然而，在短通道情况下迁移率的显着降低暴露了结构的局限性。通过对源极/漏极金属化结构进行掺杂，最大迁移率达到了150 cm〜2 V〜-1 s〜-1的值。由沟道长度减小引起的迁移率的减小也得到改善。这项研究清楚地解释了在薄膜晶体管的场效应迁移率上附加电阻的问题，以及使用带有金属化电极的自对准制造工艺的器件的成就。

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    Nguyen Van Duy; Kyunghyun Baek; Dang Ngoc Son; Wonbaek Lee; Kwangryul Kim; Byoungdeog Choi; Hokyun Chung; Junsin Yi;

  • 作者单位

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

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