Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium-Indium-Zinc Oxide Thin Film Transistors

Sun-Jae Kim; Soo-Yeon Lee; Young-Wook Lee; Woo-Geun Lee; Kap-Soo Yoon; Jang-Yeon Kwon; Min-Koo Han

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Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium-Indium-Zinc Oxide Thin Film Transistors

机译：沟道层厚度对非晶Ha铟锌氧化物薄膜晶体管特性和稳定性的影响

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We investigated the channel layer thickness dependence of the characteristics and stability in amorphous hafnium indium zinc-oxide (HIZO) thin film transistors (TFTs). HIZO TFTs were prepared with various channel thicknesses from 400 to 700A. In HIZO TFTs, carrier concentration is considerably high, which leads to channel layer thickness dependence. The threshold voltages of TFTs negatively shifted as the channel thickness increased. The threshold voltage shift at a high temperature is more severe in TFTs with thicker channel layers. The channel thickness dependence of the bias stability of HIZO TFTs is closely related to the back interface, rather than the bulk state.

机译：我们研究了非晶态f氧化铟铟锌（HIZO）薄膜晶体管（TFT）的特性和稳定性对沟道层厚度的依赖性。制备具有从400到700A的各种沟道厚度的HIZO TFT。在HIZO TFT中，载流子浓度非常高，这导致沟道层厚度依赖性。 TFT的阈值电压随着沟道厚度的增加而负向偏移。在具有较厚沟道层的TFT中，高温下的阈值电压偏移更加严重。 HIZO TFT的偏置稳定性对沟道厚度的依赖性与后界面密切相关，而不与体态密切相关。

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《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第2期|p.024104.1-024104.3|共3页
作者
Sun-Jae Kim; Soo-Yeon Lee; Young-Wook Lee; Woo-Geun Lee; Kap-Soo Yoon; Jang-Yeon Kwon; Min-Koo Han;
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Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea;

Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea;

Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea,Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea;

Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea;

Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea;

Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea;

Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea;

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Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium-Indium-Zinc Oxide Thin Film Transistors

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