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首页> 外文期刊>Japanese journal of applied physics >Effect of TiO_2 Nanoparticle Modification on Ultraviolet Photodetection Properties of Al-Doped ZnO Nanowire Network
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Effect of TiO_2 Nanoparticle Modification on Ultraviolet Photodetection Properties of Al-Doped ZnO Nanowire Network

机译:TiO_2纳米粒子修饰对掺铝ZnO纳米线网络紫外光电探测性能的影响

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摘要

This study was conducted in order to observe the changes in the ultraviolet (UV) photodetection characteristic when TiO_2 nanoparticles are modified on the surface of an aluminum-doped zinc oxide (AZO) nanowire in an AZO nanowire network with enhanced conductivity. According to the experiment results, the UV photosensitivity under a bias of 5 V was 52-fold in a bare AZO network, and it increased to 147-fold in the case when TiO_2 nanoparticles were modified. The UV reset time decreased from 9 to 5 s. The AZO nanowire onto which TiO_2 nanoparticles were adsorbed showed an approximately 2-fold faster response time and an approximately 3-fold higher UV photosensitivity than the existing bare AZO nanowire. The faster UV photoresponse time of the AZO nanowire network with adsorbed TiO_2 nanoparticles is because the adsorbed TiO_2 nanoparticles serve as recombination sites for electrons excited by UV illumination. In addition, with enhanced UV photosensitivity, adsorbed TiO_2 nanoparticles serve as electron donation sites that provide additional electrons to the AZO nanowire when UV light is turned on.
机译:进行这项研究是为了观察在以增强的电导率的AZO纳米线网络中,在掺杂铝的氧化锌(AZO)纳米线的表面上修饰TiO_2纳米粒子时,紫外(UV)光检测特性的变化。根据实验结果,在裸露的AZO网络中,在5 V偏压下的UV光敏性是52倍,而在修饰TiO_2纳米粒子的情况下,UV光敏性增加到147倍。紫外线重置时间从9 s减少到5 s。与现有的裸露的AZO纳米线相比,吸附有TiO_2纳米颗粒的AZO纳米线显示出​​更快的响应时间和大约2倍的紫外线光敏性。吸附有TiO_2纳米粒子的AZO纳米线网络具有更快的UV光响应时间,这是因为吸附的TiO_2纳米粒子充当了被紫外线照射激发的电子的复合位点。另外,随着增强的UV光敏性,吸附的TiO_2纳米颗粒可作为电子捐赠位点,当打开UV光时,它们可向AZO纳米线提供额外的电子。

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  • 来源
    《Japanese journal of applied physics》 |2011年第6issue2期|p.06GF07.1-06GF07.3|共3页
  • 作者单位

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

    Daegu-Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea;

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