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首页> 外文期刊>Japanese journal of applied physics >Signal Processing Using Karhunen-Loeve Expansion for Wafer Focus Measurement in Lithography
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Signal Processing Using Karhunen-Loeve Expansion for Wafer Focus Measurement in Lithography

机译：使用Karhunen-Loeve扩展的信号处理在光刻中进行晶圆聚焦测量

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摘要

We propose a new signal processing method using Karhunen-Loeve (KL) expansion for wafer focus measurement in lithography. With the improvement in the critical dimension (CD) accuracy, more high accuracy of wafer focus measurement becomes to be necessary. Recently, it is said that focus accuracy should be required within several ten nanometers. The accuracy of the focus measurement of the actual process wafer does not meet the requirement values due to the complexity of its structure. The objective of this study is the improvement of the focus accuracy for the actual process wafers. Our proposing focus signal processing has two steps. The first step is a supervised learning step in which main component signal waveforms (basis functions) are obtained by using KL expansion from many focus signals whose center positions are known in advance. The second step is a center position detecting step in which an input signal is approximated by using the basis functions obtained in the learning step and the center position of the signal is detected. From a comparison between the conventional signal processing and the proposing signal processing, we obtained the following result to simulated signal. Focus accuracy was rapidly improved (97%) when three basis functions were used for the approximation. By using this technology, the focus detection system can be achieved with a high accuracy and robust against various process wafers.
机译：我们提出了一种使用Karhunen-Loeve（KL）扩展技术的新信号处理方法，用于光刻中的晶圆焦点测量。随着临界尺寸（CD）精度的提高，晶片焦点测量的更高精度变得必要。近来，据说应该在几十纳米内要求聚焦精度。由于其结构的复杂性，实际处理晶圆的焦点测量精度无法满足要求值。这项研究的目的是提高实际工艺晶圆的聚焦精度。我们提出的聚焦信号处理包括两个步骤。第一步是监督学习步骤，其中通过使用KL扩展从许多中心位置预先已知的聚焦信号中获取主要成分信号波形（基本函数）。第二步骤是中心位置检测步骤，其中通过使用在学习步骤中获得的基函数来近似输入信号，并且检测信号的中心位置。通过对常规信号处理和提议信号处理之间的比较，我们对模拟信号获得了以下结果。当使用三个基函数进行近似时，聚焦精度迅速提高（97％）。通过使用该技术，可以以高精度和坚固耐用的方式针对各种工艺晶圆实现焦点检测系统。

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  • 来源
    《Japanese journal of applied physics》 |2011年第6issue2期|p.06GJ06.1-06GJ06.6|共6页
  • 作者

    Satoru Oishi; Hideki Ina; Tomoyuki Miyashita;

  • 作者单位

    Nanotechnology Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Nanotechnology Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Nanotechnology Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

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