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首页> 外文期刊>Japanese journal of applied physics >Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness
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Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness

机译：基于氯的等离子体中Si刻蚀过程中的三维原子尺度细胞模型和特征轮廓演变：轮廓异常和表面粗糙度分析

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摘要

Three-dimensional measurement and prediction of atomic-scale surface roughness on etched features become increasingly important for the fabrication of next-generation devices; however, the feature profiles are too small or too complex to measure the surface roughness on bottom surfaces and sidewalls of the etched features. To predict the surface roughness on an atomic or nanometer scale, we developed our own three dimensional atomic-scale cellular model (ASCeM-3D) and feature profile simulation, with emphasis being placed on the formation of surface roughness on the atomic scale soon after the start of Si etching in Cl_2 plasmas. Numerical results indicated that nanometer-scale convex roughened features appear on the surface soon after the start of etching, which causes the formation of a larger surface roughness, and that the surface roughness tends to be saturated after several seconds. In effect, the nanoscale convex features increase in size with increasing etching or plasma exposure time, and new nanoscale convex ones continue to appear on top of the enlarged convex ones during etching, thus resulting in concavo-convex features superimposed on the roughened surface. A comparison was also made between numerical results and experiments.
机译：三维测量和对蚀刻特征原子级表面粗糙度的预测对于下一代器件的制造变得越来越重要。然而，特征轮廓太小或太复杂而无法测量蚀刻特征的底表面和侧壁上的表面粗糙度。为了预测原子或纳米尺度的表面粗糙度，我们开发了自己的三维原子尺度的细胞模型（ASCeM-3D）和特征轮廓模拟，重点放在原子尺度上表面粗糙度的形成。开始在Cl_2等离子体中进行硅蚀刻。数值结果表明，刻蚀开始后不久在表面上出现纳米级凸面粗糙化特征，这导致形成较大的表面粗糙度，并且表面粗糙度在几秒钟后趋于饱和。实际上，随着蚀刻或等离子体暴露时间的增加，纳米级凸形特征的尺寸增大，并且在蚀刻期间新的纳米级凸形特征继续出现在扩大的凸形特征的顶部，因此导致凹凸特征叠加在粗糙化的表面上。数值结果和实验之间也进行了比较。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue2期|p.08JE06.1-08JE06.6|共6页
  • 作者

    Hirotaka Tsuda; Hiroki Miyata; Yoshinori Takao; Koji Eriguchi; Kouichi Ono;

  • 作者单位

    Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

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