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首页> 外文期刊>Japanese journal of applied physics >Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes
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Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes

机译：铁涂层和退火工艺增强微晶金刚石薄膜的电子场发射

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摘要

The electron field emission (EFE) properties of diamond films were markedly improved by Fe-coating and postannealing processes. Transmission electron microscopy examination indicated that the possible mechanism of enhancing the EFE behavior is the reaction of the Fe layer with diamond and the reprecipitation of the dissolved carbon species to form nanographite. Scanning electron micrographs showed that the Fe coating first formed Fe particles at 700℃ and then reacted with diamond, forming iron carbide (Fe_3C) at 800℃. The dissolution and reprecipitation processes occurred simultaneously during the postannealing process at higher temperatures (800-950 ℃), which leads to the formation of amorphous carbon when the postannealing temperature is low (800-850 ℃) and to that of nanographite when the postannealing temperature is high (900-950℃). The 900℃-postannealed diamond films exhibit the best EFE properties, which can be turned on at a field of E_o = 2.8 V/μm, and attain an EFE current density of J_e = 21.4μA/cm~2 at 8V/μm.
机译：铁涂层和后退火工艺显着改善了金刚石薄膜的电子场发射（EFE）性能。透射电子显微镜检查表明，增强EFE行为的可能机制是Fe层与金刚石的反应以及溶解的碳物质的再沉淀形成纳米石墨。扫描电子显微镜照片显示，Fe涂层首先在700℃下形成Fe颗粒，然后与金刚石反应，在800℃下形成碳化铁（Fe_3C）。在较高温度（800-950℃）的后退火过程中，溶解和再沉淀过程同时发生，当较低的退火温度（800-850℃）时，会形成无定形碳，而在较高的温度下会导致纳米碳的形成。高温（900-950℃）。 900℃退火后的金刚石薄膜表现出最佳的EFE性能，可以在E_o = 2.8 V /μm的电场下打开，并且在8V /μm时达到J_e =21.4μA/ cm〜2的EFE电流密度。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue3期|p.08KE04.1-08KE04.5|共5页
  • 作者

    Pin-Chang Huang; Wen-Ching Shin; Huang-Chin Chen; I-Nan Lin;

  • 作者单位

    Graduate Institute in Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan, R.O.C;

    Graduate Institute in Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan, R.O.C;

    Department of Physics, Tamkang University, Tamsui, Taiwan 251, Taiwan, R.O.C;

    Department of Physics, Tamkang University, Tamsui, Taiwan 251, Taiwan, R.O.C;

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