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Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate

机译:玻璃基板上大晶粒的多晶硅薄膜中的吸气

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摘要

Large-grained polycrystalline silicon (poly-Si) films on a glass substrate are good candidate materials for fabricating poly-Si thin-film transistors (TFTs) and poly-Si solar cells. The gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-reliability, and high-efficiency TFTs and solar cells. In this study, the gettering of large-grained thin poly-Si films with a thickness of 100 nm containing Ni impurities was studied. A large-grained Ni-doped thin poly-Si film was fabricated on a glass substrate by Ni-induced solid phase crystallization (SPC) followed by cw green laser recrystallization. The grain size of the poly-Si film was 1 × 10μm~2. The behavior of Ni impurities in the large-grained thin poly-Si film was evaluated by scanning transmission electron microscopy (STEM), STEM energy-dispersive X-ray spectroscopy (STEM-EDX), and electron diffraction (ED) analysis. It was observed that Ni was stabilized through the formation of nickel-disilicide (NiSi_2) at the triple junction during low-temperature device fabrication.
机译:玻璃基板上的大晶粒多晶硅(poly-Si)膜是制造多晶硅薄膜晶体管(TFT)和多晶硅太阳能电池的良好候选材料。在多晶硅薄膜中吸收金属杂质是实现高性能,高可靠性和高效率的TFT和太阳能电池的关键技术之一。在这项研究中,研究了含有Ni杂质的厚100nm的大晶粒多晶硅薄膜的吸杂。通过Ni诱导的固相结晶(SPC),然后进行cw绿激光重结晶,在玻璃基板上制备了大颗粒的掺杂Ni的多晶硅薄膜。多晶硅膜的晶粒尺寸为1×10μm〜2。通过扫描透射电子显微镜(STEM),STEM能量色散X射线光谱(STEM-EDX)和电子衍射(ED)分析,评估了大颗粒多晶硅薄膜中Ni杂质的行为。可以看出,在低温器件制造过程中,Ni通过在三重结处形成二硅化镍(NiSi_2)得以稳定。

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  • 来源
    《Japanese journal of applied physics》 |2010年第1issue1期|010203.1-010203.2|共2页
  • 作者

    Akito Hara; Tsutomu Sato;

  • 作者单位

    Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan;

    Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan;

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  • 正文语种 eng
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