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首页> 外文期刊>Thin Solid Films >Large-grained polycrystalline silicon on glass for thin-film solar cells
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Large-grained polycrystalline silicon on glass for thin-film solar cells

机译：薄膜太阳能电池玻璃上的大晶粒多晶硅

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摘要

We have investigated the formation of large-grained polycrystalline silicon (poly-Si) films on glass for thin-film solar cells using the 'seed layer concept' which is based on the epitaxial thickening of a thin large-grained poly-Si template (seed layer). Due to the glass substrate all process steps are limited to a temperature of about 600℃. The aluminium-induced layer exchange (ALILE) process based on the aluminium-induced crystallisation (AIC) of amorphous Si has been used to prepare p~+-type seed layers featuring large grains and a high preferential (100) orientation of the surface. The seed layers have been thickened by electron cyclotron resonance chemical vapour deposition (ECRCVD) to form the p-type absorber of the solar cell. First poly-Si thin-film solar cell structures have been prepared by deposition of an n~+-type a-Si: H emitter. So far an open circuit voltage of 284 mV has been reached without any additional treatments like defect annealing and defect passivation.
机译：我们使用“种子层概念”研究了用于薄膜太阳能电池的玻璃上大晶粒多晶硅（poly-Si）膜的形成，该“种子层概念”基于薄大晶粒多晶硅模板的外延加厚（种子层）。由于玻璃基板的原因，所有工艺步骤都限制在约600℃的温度下。基于非晶硅的铝诱导结晶（AIC）的铝诱导层交换（ALILE）工艺已用于制备具有大晶粒和表面高优先（100）取向的p〜+型籽晶层。种子层已通过电子回旋共振化学气相沉积（ECRCVD）进行了增厚，以形成太阳能电池的p型吸收剂。通过沉积n〜+型a-Si：H发射极已经制备了第一多晶硅薄膜太阳能电池结构。到目前为止，无需任何其他处理（如缺陷退火和钝化）即可达到284 mV的开路电压。

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