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Photo-Leakage Current of Zinc Oxide Thin-Film Transistors

机译:氧化锌薄膜晶体管的漏电流

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摘要

The origin of photo-leakage current of zinc oxide thin-film transistors (ZnO TFTs) under light irradiation was. investigated using a light shield technique. The irradiation position dependence revealed that the effect of light irradiation is much stronger near the source region in the channel than near the drain region. This can be explained by the enhanced carrier injection from the source electrode. The irradiation near the drain region, on the other hand, simply induced photocurrent, which is much smaller than the carrier injection on the source side. Therefore, completely transparent ZnO TFTs under visible light irradiation will be obtained, if the carrier injection from the source electrode is successfully suppressed.
机译:氧化锌薄膜晶体管(ZnO TFT)在光照射下的漏光电流的起源是。使用遮光罩技术进行了调查。照射位置依赖性显示出,在沟道中的源极区域附近比在漏极区域附近光照射的效果强得多。这可以通过增加从源电极注入载流子来解释。另一方面,在漏极区域附近的照射仅引起光电流,该光电流比在源极侧的载流子注入小得多。因此,如果成功地抑制了从源电极注入的载流子,则在可见光照射下将获得完全透明的ZnO TFT。

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  • 来源
    《Japanese journal of applied physics》 |2010年第3issue2期|p.03CB03.1-03CB03.5|共5页
  • 作者单位

    Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan;

    rnGraduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan;

    rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;

    rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;

    rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;

    rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;

    rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;

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