...
机译:氧化锌薄膜晶体管的漏电流
Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan;
rnGraduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
机译:a-InGaZnO薄膜晶体管中退火引起的漏电流和负偏置照明应力的不稳定性的定量分析
机译:利用光泄漏电流的内嵌式触摸传感器在双栅a-InGaZnO薄膜晶体管中的应用
机译:可见光辐射下不同氧分压下形成的具有ZnO沟道的薄膜晶体管的漏光电流
机译:具有旋涂锌氧化锡有源层和氧化铟锌源/漏电极的固溶处理氧化物薄膜晶体管
机译:氧化锌发光二极管,氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:铟离子注入法分析ZnO薄膜晶体管的亚阈值光泄漏电流