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首页> 外文期刊>Japanese journal of applied physics >Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction
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Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction

机译:使用高能X射线衍射测量堆叠式系统中LSI芯片的无损翘曲

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摘要

We describe high-energy X-ray diffraction to examine the warpage of packaged LSI chips nondestructively. Less absorption of the high-energy X-rays enables us to observe diffracted X-rays through packaging materials and LSI chips. We demonstrate that it is possible to measure the warpage of LSI chips in a stacked system in package (SiP). Although an LSI chip in a single-chip ball grid array (BGA) package simply warps into a convex-down shape, the LSI chips packaged in the BGA package as a stacked SiP warp into the shape of waves. It is inferred from results of our examination that the stress due to a printed circuit board substrate and molding resin affects chip warpage.
机译:我们描述了高能X射线衍射,以无损地检查封装的LSI芯片的翘曲。高能X射线的吸收较少,使我们能够观察到通过包装材料和LSI芯片产生的衍射X射线。我们证明了有可能在堆叠的系统级封装(SiP)中测量LSI芯片的翘曲。尽管单芯片球栅阵列(BGA)封装中的LSI芯片简单地翘曲成向下凸的形状,但作为堆叠式SiP封装在BGA封装中的LSI芯片却翘曲成波状。从我们的检查结果可以推断出,由于印刷电路板基板和模塑树脂引起的应力会影响芯片翘曲。

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  • 来源
    《Japanese journal of applied physics》 |2010年第4issue2期|P.04DB03.1-04DB03.5|共5页
  • 作者

    Akio Toda; Nobuyuki Ikarashi;

  • 作者单位

    Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan;

    Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan;

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