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首页> 外文期刊>Japanese journal of applied physics >Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer
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Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer

机译：具有低温生长的GaN盖层的Ga掺杂ZnO / GaN肖特基势垒紫外带通光电探测器

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摘要

Ga-doped ZnO (GZO) films were deposited onto low-temperature-grown (LTG) GaN/i-GaN (PD-I) and i-GaN (PD-II) epitaxy layers to form Schottky barrier UV band-pass photodetectors (PDs). The UV PDs exhibited a narrow band-pass spectral response ranging from 330 to 380 nm. It was also found that by using an LTG GaN layer on top of conventional nitride-based UV PDs, the leakage current was significantly reduced and a much larger photocurrent-to-dark-current contrast ratio was achieved. The short-wavelength cutoff at around 330 nm can be attributed to the marked absorption of the GZO top contact layer. The zero-bias peak responsivities were estimated to be 0.13 and 0.08 A/W at 360 nm for PD-I and PD-II, respectively. When the reverse bias was below -10V, the dark current of PD-I was considerably below 20 pA.
机译：将Ga掺杂的ZnO（GZO）膜沉积到低温生长（LTG）GaN / i-GaN（PD-I）和i-GaN（PD-II）外延层上，以形成肖特基势垒UV带通光电探测器（ PDs）。 UV PD表现出330至380 nm的窄带通光谱响应。还发现，通过在常规的基于氮化物的UV PD的顶部使用LTG GaN层，可以显着降低泄漏电流，并且可以实现更大的光电流与暗电流对比度。在330 nm附近的短波截止可以归因于GZO顶部接触层的明显吸收。对于PD-I和PD-II，零偏峰值响应率在360 nm处分别估计为0.13和0.08 A / W。当反向偏压低于-10V时，PD-1的暗电流大大低于20 pA。

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  • 来源
    《Japanese journal of applied physics》 |2010年第4issue2期|P.04DF12.1-04DF12.3|共3页
  • 作者

    Kuo-Hua Chang; Jinn-Kong Sheu; Ming-Lun Lee; Kai-Shun Kang; Jing-Fong Huang; Wei-Li Wang; Wei-Chih Lai;

  • 作者单位

    Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

    rnInstitute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

    rnDepartment of Electro-Optical Engineering, Southern Taiwan University, Tainan 71005, Taiwan;

    rnInstitute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

    rnInstitute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

    rnInstitute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

    rnInstitute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center and Center for Micro/ Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;

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