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首页> 外文期刊>Japanese journal of applied physics >Ferroelectric Properties of Bi_(1.1)Fe_(1-x)CO_xO_3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N_2 and O_2
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Ferroelectric Properties of Bi_(1.1)Fe_(1-x)CO_xO_3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N_2 and O_2

机译：在N_2和O_2中通过迭代快速热退火化学溶液沉积法制备的Bi_（1.1）Fe_（1-x）CO_xO_3薄膜的铁电性能

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摘要

Ferroelectric Bi_(1.1) Fe_(1-x)Co_xO_3 (BFCO) thin films with x = 0-0.3 have been prepared on Pt/Ti/SiO_2/Si substrates by chemical solution deposition (CSD) using iterative rapid thermal annealing (RTA) in nitrogen and oxygen. The crystallization of the rhombohedral structure of BiFeO_3 (BFO) is observed clearly in all thin films, and a monoclinic Bi_2O_3 phase is also observed and is markedly larger in Co-doped BFO thin films than in BFO thin films. An electric field of 2 MV/cm is applied to the Bi_(1.1) Fe_(0.9)Co_(0.1)O_3 thin film annealed in nitrogen at 520℃ without dielectric breakdown, but its polarization versus electric field (P-E) hysteresis loops are not saturated owing to its high leakage current density. The Bi_(1.1)Fe_(0.8)Co_(0.2)O_3 thin film prepared at 520 ℃ in oxygen shows a very good saturation of P-E hysteresis loops at room temperature (RT) at the low leakage current of about 8.7 × 10~(-3)A/cm~2 under a high electric field of 1.5 MV/cm. The leakage current at a low electric field may be Ohmic emission at any temperature; however at a high electric field, it may be attributed to tunnel emission at 80 K and Schottky emission at RT.
机译：使用迭代快速热退火（RTA）通过化学溶液沉积（CSD）在Pt / Ti / SiO_2 / Si衬底上制备了x = 0-0.3的铁电Bi_（1.1）Fe_（1-x）Co_xO_3（BFCO）薄膜在氮气和氧气中。在所有薄膜中都清楚地观察到BiFeO_3（BFO）的菱形结构的结晶，并且还观察到单斜Bi_2O_3相，并且在Co掺杂BFO薄膜中比BFO薄膜明显更大。将2 MV / cm的电场施加到在520℃的氮气中退火的Bi_（1.1）Fe_（0.9）Co_（0.1）O_3薄膜上，而没有电介质击穿，但是其极化对电场（PE）磁滞回线却没有由于其高漏电流密度而饱和。在520℃的氧气中制备的Bi_（1.1）Fe_（0.8）Co_（0.2）O_3薄膜在大约8.7×10〜（-）的低漏电流下，在室温（RT）下表现出很好的PE磁滞回线饱和。 3）在1.5MV / cm的高电场下A / cm〜2。低电场下的泄漏电流在任何温度下都可能是欧姆发射。然而，在高电场下，这可能归因于80 K下的隧道发射和RT下的肖特基发射。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MB05.1-09MB05.7|共7页
  • 作者

    Nguyen Truong Tho; Takeshi Kanashima; Masayuki Sohgawa; Dan Ricinschi; Minoru Noda; Masanori Okuyama;

  • 作者单位

    Department of Systems Innovation, Graduate School of Engineering Science, Osaka University,1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan;

    rnDepartment of Systems Innovation, Graduate School of Engineering Science, Osaka University,1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan;

    rnDepartment of Systems Innovation, Graduate School of Engineering Science, Osaka University,1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan;

    rnDepartment of Systems Innovation, Graduate School of Engineering Science, Osaka University,1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan Graduate School of Science and Engineering, Tokyo Institute of Technology,4259-G2-25 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    rnDivision of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology,Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

    rnDepartment of Systems Innovation, Graduate School of Engineering Science, Osaka University,1-3 Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan;

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