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首页> 外文期刊>Japanese journal of applied physics >32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure
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32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure

机译：高数值孔径单次曝光的32 nm半节距形成

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摘要

According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) will reach 32 and 20nm by 2012 and 2017, respectively. However, it is difficult to fabricate a sub-40 nm node using single-exposure technology with the currently available 1.35-numerical-aperture (NA) ArF immersion lithography. Although it is expected that either double patterning technology or extreme ultraviolet lithography will enable the realization of 32 nm hp, there are still many problems that need to be solved regarding cost reduction. Thus, the study of high-index fluid immersion technology should be pursued simultaneously. ArF water immersion systems with 1.35 NA have already been introduced for 40-nm-hp production. ArF immersion lithography using high-index materials is currently being studied for next-generation lithography. Currently, many studies are being undertaken in order to increase NA for a high-index fluid and a lens in immersion technology. The combination of LuAG (n = 2.14) and a third-generation fluid could be used to realize 1.55 NA. This combination of 0.25k_1 and 32 nm hp can be obtained using single-exposure technology. In order to determine the feasibility of this process and possible process hurdles for this high-NA single-exposure technology, 32 nm hp with a 1 : 1 line and space pattern is tested. Various illumination conditions are tested to realize 1 : 1 32 nm hp, and the exposure and development conditions are varied to determine whether this single exposure can provide a processible window. As a result, 32 nm hp could be obtained by single-exposure technology with 1.55 NA.
机译：根据国际半导体技术路线图（ITRS），到2012年和2017年，内存半间距（hp）分别将达到32nm和20nm。但是，使用单曝光技术和当前可用的1.35数值孔径（NA）ArF浸没式光刻技术难以制造40 nm以下的节点。尽管人们期望采用双图案技术或极紫外光刻技术都可以实现32 nm hp，但是在降低成本方面仍然有许多问题需要解决。因此，高指数流体浸没技术的研究应同时进行。具有1.35 NA的ArF水浸系统已经被引入以生产40nm-hp的功率。目前正在研究使用高折射率材料的ArF浸没式光刻技术用于下一代光刻。当前，为了增加高折射率流体和浸没技术中的透镜的NA，正在进行许多研究。 LuAG（n = 2.14）和第三代流体的组合可用于实现1.55 NA。 0.25k_1和32 nm hp的这种组合可以使用单曝光技术获得。为了确定此工艺的可行性以及该高NA单曝光技术可能遇到的工艺障碍，测试了具有1：1线条和空间图案的32 nm hp。测试各种照明条件以实现1：1 32 nm hp，并改变曝光和显影条件以确定该单次曝光是否可以提供可处理的窗口。结果，通过具有1.55 NA的单曝光技术可以获得32 nm hp。

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  • 来源
    《Japanese journal of applied physics》 |2009年第10期|106501.1-106501.4|共4页
  • 作者

    Minhee Jung; Joon-Min Park; Hye-Keun Oh;

  • 作者单位

    Department of Applied Physics, Hanyang University, Ansan 426-791, Korea;

    Department of Applied Physics, Hanyang University, Ansan 426-791, Korea;

    Department of Applied Physics, Hanyang University, Ansan 426-791, Korea;

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