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首页> 外文期刊>Japanese journal of applied physics >Hybrid Sub-Resolution Assisting Feature Implementation Methodology by Process Window Aware Optical Proximity Correction Model
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Hybrid Sub-Resolution Assisting Feature Implementation Methodology by Process Window Aware Optical Proximity Correction Model

机译：借助过程窗口感知的光学邻近校正模型的混合子分辨率辅助特征实现方法

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摘要

Driven by steadily decreasing critical dimensions in the semiconductor technology, sub-resolution assisting feature (SRAF) has been proposed to enlarge the capability of the exposure technique to smaller pitch requirements exceeding the standard lithography specification by improving the through-focus process window. There are generally two types of SRAF implementation methodologies: the rule-based approach and the model-based approach. In this paper, the hybrid SRAF implementation methodology is proposed to benefit from these two methodologies. Firstly, the candidate rules are selected by using the process window aware optical proximity correction (OPC) model. Secondly, the candidate SRAF rules are taped out. Finally, the optimized candidates among the taped out SRAF rules are verified by wafer data. If the wafer data show that the SRAF rule will not meet the criteria, the SRAF implementation methodology will go back to evaluate other candidates. From the wafer data, it is proved that the hybrid SRAF implementation methodology can achieve an optimized through-focus process window in a short turn around time (TAT) with lower engineering and mask cost.
机译：在半导体技术中稳定减小关键尺寸的驱动下，已经提出了亚分辨率辅助功能（SRAF），以通过改善贯穿焦点的处理窗口，将曝光技术的能力扩大到超过标准光刻规范的更小的间距要求。 SRAF实施方法通常有两种类型：基于规则的方法和基于模型的方法。本文提出了混合SRAF实现方法，以从这两种方法中受益。首先，使用过程窗口感知的光学邻近校正（OPC）模型选择候选规则。其次，拟定了候选SRAF规则。最后，通过晶圆数据验证了SRAF规则中的最佳候选。如果晶圆数据显示SRAF规则不符合标准，则SRAF实施方法将返回以评估其他候选者。从晶圆数据可以证明，混合SRAF实现方法可以在较短的周转时间（TAT）内实现优化的贯穿焦点工艺窗口，而工程和掩模成本更低。

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  • 来源
    《Japanese journal of applied physics》 |2009年第3issue1期|339-344|共6页
  • 作者

    Liang Zhu; Xiaohui Kang; Yili Gu; Steve Yang;

  • 作者单位

    Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science,Shanghai 200050, People's Republic of China Graduate School of Chinese Academy of Science, Beijing 100049, People's Republic of China Grace Semiconductor Manufacturing Corporation, Shanghai 201203, People's Republic of China;

    Mentor Graphics Corp., Shanghai 200120, People's Republic of China;

    Grace Semiconductor Manufacturing Corporation, Shanghai 201203, People's Republic of China;

    Grace Semiconductor Manufacturing Corporation, Shanghai 201203, People's Republic of China;

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