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Achieving Multiple Resistance States in Phase-Change Memory Cell

机译：在相变存储单元中实现多种电阻状态

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摘要

Ge_2Sb_2Tes (GST)-based phase-change random access memory (PCM) cells were successfully fabricated by a standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) process. The bottom electrode contacts (BECs) of the PCM cells are tungsten heaters with hollow columns filled with SiO_2 and Ge. An approach of multiple resistance states (MRSs) was demonstrated. It was revealed and simulated that the observed MRS, in fact, derives from the hollow tungsten BEC architecture. The variance of electrical resistance between the MRSs can be as high as two orders. With a proposed model, our research demonstrated a simple but applicable concept of building a more stable multiple storage (MS) PCM cell by simply tuning the contact area between the BEC and GST.
机译：通过标准的0.18μm互补金属氧化物半导体（CMOS）工艺成功制造了基于Ge_2Sb_2Tes（GST）的相变随机存取存储器（PCM）单元。 PCM单元的底部电极触点（BEC）是带有空心柱的SiO2和Ge填充的钨加热器。证明了一种多重抵抗状态（MRS）的方法。揭示并模拟，观察到的MRS实际上源自空心钨BEC体系结构。 MRS之间的电阻变化可能高达两个数量级。通过提出的模型，我们的研究证明了通过简单地调整BEC与GST之间的接触面积来构建更稳定的多存储（MS）PCM单元的简单但适用的概念。

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  • 来源
    《Japanese journal of applied physics》 |2009年第7issue1期|074501.1-074501.4|共4页
  • 作者

    Ke Wang; Xiao Dong Han; Ze Zhang; Liang Cai Wu; Bo Liu; Zhi Tang Song; Song Lin Feng;

  • 作者单位

    Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China;

    Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China;

    Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China;

    Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

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