• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios
【24h】

The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios

机译：等离子体处理吸附的碘对铜化学气相沉积催化剂的影响及其在高深宽比沟槽填充中的应用

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Plasma treatment was introduced in order to control the catalytic properties of iodine in catalyst-enhanced chemical vapor deposition (CECVD) of copper (Cu). The iodine adatoms are deactivated (i.e., lose their catalytic effect) by forming Cu-I bonds through reaction with Cu atoms by the bombardment of ions during the plasma treatment. The surface concentration of effective iodine adatoms that can act as catalysts decreases exponentially with an increasing of ion exposure which is the product of ion flux and plasma treatment time. The deactivated iodine can be reactivated by annealing above 200 ℃. The enhancement factor, defined as the ratio of the enhanced deposition rate of Cu film by the adsorbed iodine to the deposition rate without the catalytic effect of iodine, is proportional to the surface concentration of effective iodine adatoms. The distribution of the surface concentration of effective iodine adatoms inside the trench can be controlled by the plasma treatment. CECVD coupled with plasma treatment enables void-free filling of deep trenches with an aspect ratio of 14.
机译：为了控制碘在铜（Cu）的催化剂增强化学气相沉积（CECVD）中的催化性能，引入了等离子体处理。通过在等离子体处理过程中通过离子轰击与铜原子反应形成Cu-1键，使碘原子失去活性（即失去催化作用）。可以作为催化剂的有效碘吸附原子的表面浓度会随着离子暴露量的增加而呈指数下降，而离子暴露量是离子通量和等离子体处理时间的乘积。失活的碘可以通过200℃以上的退火来重新活化。增强因子定义为被吸收的碘增加的铜膜沉积速率与没有碘的催化作用的沉积速率之比，与有效碘原子的表面浓度成正比。沟槽内有效碘原子的表面浓度分布可以通过等离子体处理来控制。 CECVD与等离子处理相结合，可实现深沟槽的无空隙填充，纵横比为14。

著录项

  • 来源
    《Japanese journal of applied physics》 |2009年第7issue1期|076004.1-076004.6|共6页
  • 作者

    Do-Seon Lee; Won-Jong Lee;

  • 作者单位

    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea;

    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号