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首页> 外文期刊>Japanese journal of applied physics >Low-Temperature Chemical Vapor Deposition of Anatase TiO_2 with Titanium Tetraisopropooxide and H_2O_2 Vapor
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Low-Temperature Chemical Vapor Deposition of Anatase TiO_2 with Titanium Tetraisopropooxide and H_2O_2 Vapor

机译：四异丙氧基钛和H_2O_2蒸气对锐钛矿型TiO_2的低温化学气相沉积

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摘要

Polycrystalline anatase TiO_2 films have been successfully deposited on Si(100) substrates at a temperature of 250℃ at growth rates of higher than 10 A/s by atmospheric chemical vapor deposition with titanium tetraisopropooxide as a precursor and H_2O_2 vapor as an oxidant. The H_2O_2 vapor enhances the crystallization of the TiO_2 amorphous network in the grown films. We also show that TiO_2 film obtained by low-temperature deposition with the H_2O_2 vapor exhibits a photocatalytic activity for the naturally adsorbed carbon impurity on its surface, indicating the applicability of the present technique to the field of photocatalyst coating. The present technique is also applicable to the deposition of anatase TiO_2 films on flexible polyimide tapes.
机译：以四异丙氧基钛为前驱体，H_2O_2蒸气为氧化剂，通过大气化学气相沉积法在250℃的Si（100）衬底上以10 A / s的生长速率成功沉积了多晶锐钛矿型TiO_2薄膜。 H_2O_2蒸气增强了生长膜中TiO_2非晶网络的结晶。我们还表明，通过用H_2O_2蒸气进行低温沉积而获得的TiO_2薄膜对表面自然吸附的碳杂质表现出光催化活性，表明本技术在光催化剂涂层领域的适用性。本技术还适用于在柔性聚酰亚胺带上沉积锐钛矿型TiO_2薄膜。

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