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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Data Retention and Readout Degradation Properties of Pt/Sr_(0.7)Sm_(0.07)Bi_(2.2)Ta_2O_9/HfO_2/Si Structure Ferroelectric-Gate Field Effect Transistors
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Data Retention and Readout Degradation Properties of Pt/Sr_(0.7)Sm_(0.07)Bi_(2.2)Ta_2O_9/HfO_2/Si Structure Ferroelectric-Gate Field Effect Transistors

机译：Pt / Sr_（0.7）Sm_（0.07）Bi_（2.2）Ta_2O_9 / HfO_2 / Si结构铁电栅场效应晶体管的数据保留和读出降解特性

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摘要

We discuss the data retention and readout degradation properties of ferroelectric-gate field-effect transistors (FeFETs) with Pt/Sr_(0.7)Sm_(0.07)Bi_(2.2)Ta_2O_9/HfO_2/Si structures. We first point out that to read out the stored data correctly, unselected FeFETs should be turned off during the readout process and that this process causes a significant reduction of ON readout current. We next characterize the data retention properties of Pt/Sr_(0.7)Sm_(0.07)Bi_(2.2)Ta_2O_9/HfO_2/Si structure n-channel FeFET by taking the readout process into account. It is shown that the retention property measured by applying positive readout pulses after holding at V_G = 0 V for 30 s, is similar to that measured by the conventional method in which drain current is continuously measured at a positive hold voltage.
机译：我们讨论具有Pt / Sr_（0.7）Sm_（0.07）Bi_（2.2）Ta_2O_9 / HfO_2 / Si结构的铁电栅场效应晶体管（FeFET）的数据保留和读出退化特性。我们首先指出，要正确地读出存储的数据，在读出过程中应关闭未选择的FeFET，并且该过程会显着降低ON读出电流。接下来，我们通过考虑读出过程来表征Pt / Sr_（0.7）Sm_（0.07）Bi_（2.2）Ta_2O_9 / HfO_2 / Si结构n通道FeFET的数据保留特性。结果表明，在V_G = 0 V保持30 s后，施加正读数脉冲所测得的保持性能类似于通过传统方法测得的漏电流，在传统方法中，在正保持电压下连续测量漏极电流。

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