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首页> 外文期刊>Journal of Materials Science Letters >Electrical properties of the Pt/Sr_(0.85)Bi_(2.4)Ta_2O_9/TiO_2/Si structure with variation of the Sr_(0.85)Bi_(2.4)Ta_2O_9 film thickness
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Electrical properties of the Pt/Sr_(0.85)Bi_(2.4)Ta_2O_9/TiO_2/Si structure with variation of the Sr_(0.85)Bi_(2.4)Ta_2O_9 film thickness

机译：Pt / Sr_（0.85）Bi_（2.4）Ta_2O_9 / TiO_2 / Si结构的电学性质随Sr_（0.85）Bi_（2.4）Ta_2O_9膜厚的变化而变化

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摘要

Ferroelectric thin films have been investigated for use in nonvolatile memory (FRAM) applications [1, 2]. Recently, researches for ferroelectric thin films have been focused on SrBi_2Ta_2O_9 thin films due to their fatigue-free characteristics [1, 2]. One of the most promising FRAM devices is the metal-ferroelectric-semiconductor field-effect-transistor (MFS-FET), in which ferroelectric thin film is used as a gate material [3, 4]. However, interfacial reactions between ferroelectric thin film and Si substrate make it difficult to obtain the desired electrical characteristics for MFS-EFT devices [5, 6]. As an alternative solution, metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed to improve the interfacial properties using buffer layers such as CeO_2, Y_2O_3, MgO, and SrTiO_3 [7, 8]. In this study, Pt/SBT/TiO_2/Si structures for MFIS-FET applications were prepared using 10 nm-thick TiO_2 buffer layer and 240-400 nm-thick Sr_(0.85)Bi_2Ta_2O_9 (SBT) films. Electrical properties of the SBT film and the Pt/SBT/TiO_2/Si structure were characterized with variation of the SBT film thickness.
机译：已经研究了铁电薄膜用于非易失性存储器（FRAM）的应用[1、2]。近年来，由于其无疲劳特性，铁电薄膜的研究集中在SrBi_2Ta_2O_9薄膜上[1，2]。最有前途的FRAM器件之一是金属铁电半导体场效应晶体管（MFS-FET），其中铁电薄膜用作栅极材料[3，4]。然而，铁电薄膜和硅衬底之间的界面反应使得难以获得MFS-EFT器件所需的电学特性[5，6]。作为一种替代解决方案，已经提出了金属铁电绝缘体半导体（MFIS）结构，以使用诸如CeO_2，Y_2O_3，MgO和SrTiO_3的缓冲层来改善界面性能[7，8]。在这项研究中，使用10 nm厚的TiO_2缓冲层和240-400 nm厚的Sr_（0.85）Bi_2Ta_2O_9（SBT）膜制备了用于MFIS-FET应用的Pt / SBT / TiO_2 / Si结构。通过改变SBT膜厚来表征SBT膜的电性能和Pt / SBT / TiO_2 / Si结构。

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