Ferroelectric Characteristics of Sr_xBi_(2.4)Ta_2O_9 Thin Films and Electrical Properties of the Pt/Sr_xBi_(2.4)Ta_2O_9/TiO_2/Si Structure

机译：Sr_xBi_（2.4）Ta_2O_9薄膜的铁电特性和Pt / Sr_xBi_（2.4）Ta_2O_9 / TiO_2 / Si结构的电性能

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Ferroelectric characteristics of the 400 nm-thick Sr_xBi_(2.4)Ta_2O_9(0.7 ≤ x ≤ 1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr_(0.85)Bi_(2.4)Ta_2O_9/TiO_2/Si structure prepared using TiO_2 buffer layer were characterized. The Sr-deficient Sr_xBi_(2.4)Ta_2O_9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr_(0.85)Bi_(2.4)Ta_2O_9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among Sr_xBi_(2.4)Ta_2O_9 films. A memory window of the Pt/Sr_xBi_(2.4)Ta_2O_9/TiO_2/Si structure was dependent upon the coercive field of the Sr_xBi_(2.4)Ta_2O_9 film, and the Pt/Sr_(0.85)Bi_(2.4)Ta_2O_9/TiO_2/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of +-5 V.

机译：研究了通过有机金属分解处理的400 nm厚Sr_xBi_（2.4）Ta_2O_9（0.7≤x≤1.3）薄膜的铁电特性，以及Pt / Sr_（0.85）Bi_（2.4）Ta_2O_9 / TiO_2 / Si结构的电性能表征了使用TiO_2缓冲层制备的材料。与过量Sr薄膜相比，缺乏Sr的Sr_xBi_（2.4）Ta_2O_9薄膜显示出完善的铁电磁滞曲线。在Sr_xBi_（2.4）Ta_2O_9膜中，Sr_（0.85）Bi_（2.4）Ta_2O_9膜表现出最佳的铁电性能，例如高剩余极化率和低漏电流密度。 Pt / Sr_xBi_（2.4）Ta_2O_9 / TiO_2 / Si结构的存储窗口取决于Sr_xBi_（2.4）Ta_2O_9薄膜的矫顽场，并显示Pt / Sr_（0.85）Bi_（2.4）Ta_2O_9 / TiO_2 / Si在+ -5 V的扫描电压下，最大存储窗口为1.3 V.

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《International Symposium on Designing, Processing and Properties of Advanced Engineering Materials(ISAEM 2003) pt.1; 20031105-20031108; Jeju Island; KR》|2003年|P.477-480|共4页
会议地点 Jeju(KR);Jeju(KR)
作者
J. H. Choi; T. S. Oh;
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作者单位

Department of Materials Science and Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-gu, Seoul 121-791, Korea;

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原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词
SBT; ferroelectric thin film; MOD; memory window; MFIS-FET;

机译：SBT;铁电薄膜; MOD;存储器窗口; MFIS-FET;

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Ferroelectric Characteristics of Sr_xBi_(2.4)Ta_2O_9 Thin Films and Electrical Properties of the Pt/Sr_xBi_(2.4)Ta_2O_9/TiO_2/Si Structure

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