20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Shinichi Iwakami; Osamu Machida; Masataka Yanagihara; Toshihiro Ehara; Nobuo Kaneko; Hirokazu Goto; Akio Iwabuchi

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20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

机译：Si衬底上的20mΩ，750 V大功率AlGaN / GaN异质结构场效应晶体管

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Low on-resistance and high-breakdown-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrate were fabricated. To improve the breakdown voltage of HFET, the total thickness of epitaxial layers was increased and the gate-to-drain spacing was expanded. As a result, the fabricated AlGaN/GaN HFETs with a gate width of 516 mm exhibited a breakdown voltage of 750 V, an on-resistance of 20 mΩ, and a maximum drain current of more than 170 A. The on-resistance-area product (R_(on) x A) was 0.26 Ω·mm~2. This value was approximately 1/30 compared with that of conventional Si metal-oxide-semiconductor field-effect transistors (MOSFETs).

机译：在硅衬底上制造了低导通电阻和高击穿电压的AlGaN / GaN异质结构场效应晶体管（HFET）。为了提高HFET的击穿电压，增加了外延层的总厚度，并扩大了栅极到漏极的间距。结果，制成的栅极宽度为516 mm的AlGaN / GaN HFET的击穿电压为750 V，导通电阻为20mΩ，最大漏极电流超过170A。导通电阻区域积（R_（on）x A）为0.26Ω·mm〜2。与常规的Si金属氧化物半导体场效应晶体管（MOSFET）相比，该值约为1/30。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2007年第24期|p.L587-L589|共3页
作者
Shinichi Iwakami; Osamu Machida; Masataka Yanagihara; Toshihiro Ehara; Nobuo Kaneko; Hirokazu Goto; Akio Iwabuchi;
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作者单位

Advanced Technology Development Division, Engineering Headquarters, Sunken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
AlGaN/GaN; HFET; Si substrate; low on-resistance; high breakdown voltage;

机译：AlGaN / GaN;HFET;Si衬底;低导通电阻;高击穿电压;

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1. Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates [J] . Alekseev AN, Aleksandrov SB, Byrnaz AE, Technical physics letters: Letters to the Russian journal of applied physics . 2008,第8期

机译：氨MBE在AlN / SiC衬底上生长的高功率场效应晶体管的多层AlN / AlGaN / GaN / AlGaN异质结构
2. Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE on Silicon Substrates [J] . A. N. Alekseev, S. B. Aleksandrov, A. E. Byrnaz, Technical physics letters: Letters to the Russian journal of applied physics . 2008,第4期

机译：氨MBE在硅衬底上生长的用于高功率场效应晶体管的多层AlN / AlGaN / GaN / AlGaN异质结构
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4. High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200 mm Si Substrates [C] . C. F. Lo, O. Laboutin, C. K. Kao, Wide bandgap semiconductor materials and devices 16 . 2015

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5. Process development and characterization of AlGaN/GaN heterostructure field-effect transistors [D] . Ping, Andrew Taiann 1999

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7. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors [O] . C. Q. Chen, J. P. Zhang, V. Adivarahan, 2003

机译：AlGaN / GaN / AlGaN双重异质结构，用于高功率III-N场效应晶体管
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

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20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

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