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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
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Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

机译：单模InGaAs亚单层量子点光子晶体垂直腔面发射激光器的特性

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摘要

An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs ( < 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device.
机译：首次展示了用于光纤应用的InGaAs亚单层（SML）量子点光子晶体垂直腔面发射激光器（QD PhC-VCSEL）。器件的有源区包含三个InGaAs SML QD层。每个InGaAs SML QD层均通过交替沉积InAs（<1 ML）和GaAs形成。在990 nm范围内，以0.9 mA的阈值电流实现了在28 mA时3.8 mW的单基波模式CW输出功率。在整个当前工作范围内，均已证明大于35 dB的侧模抑制比（SMSR）。 PhC-VCSEL的光束轮廓和近场图像研究表明，激光束受到设备光子晶体结构的良好限制。

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