Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode

著录项

• 来源
  《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第12期|p.9001-9010|共10页
• 作者

  Isamu Akasaki; Hiroshi Amano;

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• 作者单位

  Department of Materials Science and Engineering and Nano-factory, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 应用物理学;
• 关键词

  group III nitride semiconductors; MOVPE; low-temperature buffer layer; conductivity control; p-n junction; blue-light-emitting diode; short-wavelength laser diode; high-speed and high-power transistor;

  机译：III族氮化物半导体;MOVPE;低温缓冲层;电导率控制;p-n结;蓝色发光二极管;短波长激光二极管;高速大功率晶体管;