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Analytical Model of Organic Field-Effect Transistor Based on Gradual Channel Approximation with Field-Dependent Mobility

机译:基于场相关迁移率的逐步通道近似的有机场效应晶体管分析模型

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摘要

We developed an analytical model of an organic field-effect transistor (OFET) based on the gradual channel approximation with electric field (E)-dependent mobility μ = μ_0 exp(β E~(1/2)). The theoretical drain current-drain voltage curves are in good agreement with the measurements of pentacene OFETs, and the prefactor mobility μ_0 at temperatures ranging from 233 to 303 K was evaluated. The electric-field- and temperature-dependent carrier transports are discussed independently in terms of μ_0 on the basis of this model.
机译:我们基于与电场(E)相关的迁移率μ=μ_0exp(βE〜(1/2))的逐步沟道近似,开发了有机场效应晶体管(OFET)的分析模型。理论上的漏极电流-漏极电压曲线与并五苯OFET的测量值非常吻合,并且评估了在233至303 K温度范围内的前体迁移率μ_0。在此模型的基础上,根据μ_0独立讨论了电场和温度相关的载流子传输。

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