Growth of Silicon Nanocrystals by Low-Temperature Photo Chemical Vapor Deposition

Sang Soo Kim; Kee In Bang; Joonghwan Kwak; Koeng Su Lim

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Growth of Silicon Nanocrystals by Low-Temperature Photo Chemical Vapor Deposition

机译：低温光化学气相沉积法生长硅纳米晶

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Silicon nanocrystals on a thermally grown silicon oxide have been fabricated at a low temperature using the photo chemical vapor deposition (photo-CVD). Even at a low temperature of 150℃, crystalline silicon nanocrystals are successively formed by this method. By changing the gas mixture of SiH_4 and H_2, the size and number density of Si nanocrystals are systematically investigated in a controlled manner. The shape, size, and crystallinity of such nanocrystals examined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). To apply Si nanocrystals in nonvolatile memory, the capacitance-voltage (CV) characteristics of Si nanocrystals are also discussed in this paper.

机译：使用光化学气相沉积（photo-CVD）在低温下在热生长的氧化硅上制造了硅纳米晶体。即使在150℃的低温下，通过这种方法也可以连续形成晶体硅纳米晶体。通过改变SiH_4和H_2的混合气体，可控地研究了Si纳米晶体的尺寸和数量密度。通过透射电子显微镜（TEM）和扫描电子显微镜（SEM）检查了这种纳米晶体的形状，大小和结晶度。为了将Si纳米晶体应用于非易失性存储器，本文还讨论了Si纳米晶体的电容-电压（CV）特性。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第3期|p.L46-L49|共4页
作者
Sang Soo Kim; Kee In Bang; Joonghwan Kwak; Koeng Su Lim;
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作者单位

Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
silicon nanocrystals; photo chemical vapor deposition; coulomb blockade effect; CV measurement;

机译：硅纳米晶体;光化学气相沉积;库仑阻挡效应;CV测量;

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Growth of Silicon Nanocrystals by Low-Temperature Photo Chemical Vapor Deposition

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