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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Polarization Reversal Property of Ferroelectric Thin Film for Ferroelectric Memories
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Polarization Reversal Property of Ferroelectric Thin Film for Ferroelectric Memories

机译：铁电薄膜的铁电薄膜的极化反转特性

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摘要

We studied the polarization reversal property of a ferroelectric thin film. Ferroelectric thin films of (PbLa)(ZrTi)O_3 (PLZT) were prepared by chemical solution deposition (CSD). Applying triangular wave and pulse wave voltages to specimens, we observed the rising of the coercive field and the activation field of ferroelectric thin films with increasing frequency. This shows that the polarization reversal is suppressed because of the increase in the viscosity of the ferroelectric domain wall caused by the increase in the frequency of the applied electric field. Additionally, we measured the frequency dependence of dielectric constant and found that, compared with the experimental data and the Debye model, the relaxation time of the dipole increases because the reversal of the dipole cannot follow the external electric field. As a result of these, it is found that the increase in the viscosity of ferroelectric domain wall is caused by the inability of the reversal of the dipole to follow the external electric field.
机译：我们研究了铁电薄膜的极化反转特性。通过化学溶液沉积（CSD）制备（PbLa）（ZrTi）O_3（PLZT）的铁电薄膜。在样品上施加三角波和脉冲波电压，我们观察到铁电薄膜的矫顽场和激活场随频率的增加而上升。这表明由于施加电场的频率的增加引起的铁电畴壁的粘度的增加而抑制了极化反转。此外，我们测量了介电常数的频率依赖性，发现与实验数据和Debye模型相比，偶极子的弛豫时间增加了，因为偶极子的反向不能跟随外部电场。结果，发现铁电畴壁的粘度增加是由于偶极子的反转不能跟随外部电场引起的。

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