Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

Kwang-Jow GAN; Cher-Shiung TSAI; Dong-Shong LIANG; Chun-Ming WEN; Yaw-Hwang CHEN

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

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Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

机译：使用标准SiGe工艺制造的金属氧化物半导体场效应晶体管双极结晶体管负微分电阻电路的三值存储电路

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摘要

A trivalued memory circuit based on two cascoded metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 μm SiGe process.

机译：研究了基于两个级联金属氧化物半导体场效应晶体管双极结晶体管负微分电阻（MOS-BJT-NDR）器件的三值存储电路。 MOS-BJT-NDR器件由MOS和BJT器件制成，但可以通过适当设置MOS参数来显示NDR电流-电压特性。我们演示了一个三值存储电路，该电路使用两个峰值MOS-BJT-NDR电路作为驱动器，并使用电阻作为负载。 MOS-BJT-NDR器件和存储电路通过标准的0.35μmSiGe工艺制造。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第36期|p.L977-L979|共3页
作者
Kwang-Jow GAN; Cher-Shiung TSAI; Dong-Shong LIANG; Chun-Ming WEN; Yaw-Hwang CHEN;
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作者单位

Department of Electronic Engineering, Kun Shan University, 949 Da-Wan Road, Yung-Kang, Tainan Hsien 710, Taiwan, R.O.C.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
memory circuit; MOS; BJT; negative differential resistance; SiGe process;

机译：存储电路MOS BJT负差分电阻SiGe工艺;

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Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

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