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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Organic Monolayers Covalently Bonded to Si as Ultra Thin Photoresist Films in Vacuum UV Lithography
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Organic Monolayers Covalently Bonded to Si as Ultra Thin Photoresist Films in Vacuum UV Lithography

机译：在真空紫外光刻中，有机单层共价键合到硅上作为超薄光刻胶膜

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摘要

Self-assembled monolayers (SAMs) covalently attached to Si(111) substrates through Si-C or Si-O-C chemical bonds have been synthesized using chemical reactions of 1-hexadecene or 1-hexadecanol with Si(111) substrates terminated with hydrogen and, applied as ultra thin resist films of about 2nm thick in photolithography based on vacuum UV light at a wavelength of 172 nm. The SAMs were so uniform that the surface structure of the Si substrates consisting monoatomic steps and atomically flat terraces remained even after the SAM formation. Furthermore, the SAMs showed excellent chemical resistivities to HF and were successfully applied to masks for Si oxide etching.
机译：通过1-十六碳烯或1-十六烷醇与以氢封端的Si（111）基板的化学反应合成了通过Si-C或Si-OC化学键共价连接到Si（111）基板的自组装单分子膜（SAMs）。在基于172 nm波长的真空UV光的光刻中用作约2nm厚的超薄抗蚀剂膜。 SAM是如此均匀，以至于甚至在SAM形成之后，仍包含由单原子台阶和原子平坦平台组成的Si衬底的表面结构。此外，SAM对HF表现出极好的化学电阻率，并成功地应用于氧化硅刻蚀的掩模。

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