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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process
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Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process

机译：双频叠加射频电容耦合等离子体刻蚀工艺

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摘要

A dual-frequency superimposed (DFS) 100 MHz and 3.2 MHz rf capacitive-coupled plasma etch process for sub-90 nm devices has been developed. The electron density of DFS reactive ion etching (RIE) plasma at 40 mTorr was controlled from 4.0 x 10~(10) to 3.6 x 10~(11) cm~(-3) by adjusting the 100 MHz rf power, and the self-bias voltage (-V_(dc)) was controlled from 20 to 760 V by adjusting the superimposed 3.2 MHz rf power. DFS RIE demonstrated independent control of electron density and self-bias voltage in a wide range. In the damascene etch process of SiOC film using Si_3N_4 as an etch mask, it was found that mask edge erosion is dependent on ion energy regardless of the selectivity of SiOC to Si_3N_4. DFS RIE offers the most suitable process for damascene etching of SiOC, which requires precise ion energy control.
机译：已开发出用于低于90 nm器件的双频叠加（DFS）100 MHz和3.2 MHz RF电容耦合等离子体刻蚀工艺。通过调节100 MHz射频功率，将40 mTorr的DFS反应离子刻蚀（RIE）等离子体的电子密度从4.0 x 10〜（10）调节到3.6 x 10〜（11）cm〜（-3）通过调节叠加的3.2 MHz rf功率，将-bias电压（-V_（dc））从20 V控​​制到760V。 DFS RIE证明了在宽范围内对电子密度和自偏压的独立控制。在使用Si_3N_4作为蚀刻掩模的SiOC膜的大马士革蚀刻工艺中，发现掩模边缘腐蚀取决于离子能量，而与SiOC对Si_3N_4的选择性无关。 DFS RIE提供了最适合用于SiOC镶嵌蚀刻的工艺，该工艺需要精确的离子能量控制。

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