Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

Hajime Shibata; Masamichi Sakai; Akimasa Yamada; Koji Matsubara; Keiichiro Sakurai; Hitoshi Tampo; Shogo Ishizuka; Kyoung-Kook Kim; Sigeru Niki

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Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

机译：半导体自由激子光致发光的激发功率相关性

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We have derived an analytical formula for the excitation-power dependence of the free exciton photoluminescence (PL) intensity. It has been found that the PL intensity I depends on the power of the excitation laser L as I ∝ L~k, where k is the power index. We have deduced the analytical formula that describes the value of k for the free exciton PL emission under the above-band-gap excitation conditions. The results indicate that the value of k is in the region of 1 < k < 2 depending on both the value of L and material properties such as radiative and competitive nonradiative recombination probabilities.

机译：我们已经得出了自由激子光致发光（PL）强度对激发功率的依赖性的解析公式。已经发现，PL强度I取决于激发激光器L的功率，为I∝L〜k，其中k是功率指标。我们推导了描述上述带隙激发条件下自由激子PL发射的k值的解析公式。结果表明，k的值在1

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第8期|p.6113-6114|共2页
作者
Hajime Shibata; Masamichi Sakai; Akimasa Yamada; Koji Matsubara; Keiichiro Sakurai; Hitoshi Tampo; Shogo Ishizuka; Kyoung-Kook Kim; Sigeru Niki;
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作者单位

National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
semiconductors; photoluminescence; free exciton; excitation-power dependence;

机译：半导体;光致发光;自由激子;激发功率依赖性;

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2. Exciton-photon coupling at the n = 1 exciton resonances and thickness dependence of absorption in semiconductors [J] . I.S.Gorban, A.P.Krokhmal, Z.Z.Yanchuk Functional Materials . 2000,第4Pt2期

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3. Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI_2 [J] . M. Ando, M. Yazaki, I. Katayama, Physical review . 2012,第15期

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5. Using Time-Resolved Photoluminescence Spectroscopy to Examine Exciton Dynamics in II-VI Semiconductor Nanostructures [D] . Robinson, Laura M. 2001

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6. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound charged and free excitons [O] . Sefaattin Tongay, Joonki Suh, Can Ataca, -1

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Excitation-Power Dependence of Free Exciton Photoluminescence of Semiconductors

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