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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
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Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires

机译：背栅对绝缘体上硅沟槽线中库仑阻塞的影响

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摘要

A back-gate (BG) effect on a Coulomb blockade in a double-gate silicon-on-insulator (SOI) nanowire is investigated. The nanowire, which is situated at the bottom of a trench and connected to thicker source/drain regions, has a naturally formed barrier at both ends and works as a single-electron transistor at low temperatures. We found that a negative BG voltage increases the charging energy of the Coulomb-blockade island in the nanowire as well as the tunnel resistance of the barriers. This indicates the possibility that the BG voltage shifts the electron wave functions in the source/drain area away from the Coulomb-blockade island and decreases the capacitance of the small junctions located at both ends of the island.
机译：研究了双栅极绝缘体上硅（SOI）纳米线对库仑阻塞的背栅（BG）效应。纳米线位于沟槽的底部并连接到较厚的源/漏区，该纳米线的两端均具有自然形成的势垒，并在低温下用作单电子晶体管。我们发现负的BG电压会增加纳米线中库仑封锁岛的充电能量以及势垒的隧道电阻。这表明BG电压可能会将源/漏区中的电子波功能移离库仑阻塞岛，并降低位于岛两端的小结的电容。

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