Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate

Masataka IMURA; Akira HOSHINO; Kiyotaka NAKANO; Michinobu TSUDA; Motoaki IWAYA; Satoshi KAMIYAMA; Hiroshi AMANO; Isamu AKASAKI

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Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate

机译：精确偏置控制（1102）蓝宝石衬底上的平坦（1120）GaN薄膜

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摘要

A high-quality thin (1120) GaN layer with an atomically flat surface has been successfully grown on a precisely offset-angle-controlled (1102) sapphire substrate by metal-organic vapor phase epitaxy. The insertion of an AlGaN layer between the underlying AlN layer and the GaN layer was found to improve the crystalline quality of the upper GaN layer.

机译：通过金属有机气相外延成功地在具有精确偏角控制（1102）的蓝宝石衬底上成功生长了具有原子平坦表面的高质量薄（1120）GaN层。发现在下面的AlN层和GaN层之间插入AlGaN层可以改善上GaN层的晶体质量。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第10期|p.7418-7420|共3页
作者
Masataka IMURA; Akira HOSHINO; Kiyotaka NAKANO; Michinobu TSUDA; Motoaki IWAYA; Satoshi KAMIYAMA; Hiroshi AMANO; Isamu AKASAKI;
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作者单位

Faculty of Science and Technology, 21st-Century COE Program;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
AIM; GaN; nonpolar; a-GaN; r-sapphire; offset;

机译：AIM;GaN;非极性;a-GaN;r-蓝宝石;偏移;

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专利

1. Characterization of structural defects in (1120) GaN films grown on (1102) sapphire substrates [J] . P. Vennegues, F. Mathal, Z. Bougrioua Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：在（1102）蓝宝石衬底上生长的（1120）GaN膜中结构缺陷的表征
2. Mechanism of Growth of Cr_2O_3 Thin Films on (1102), (1120), and (0001) Surfaces of Sapphire Substrates by Direct Current-Radio Frequency Magnetron Sputtering [J] . Nobuyuki Iwata, Takuji Kuroda, Hiroshi Yamamoto Japanese journal of applied physics . 2012,第11ISSUE2期

机译：直流-射频磁控溅射在蓝宝石衬底的（1102），（1120）和（0001）表面上生长Cr_2O_3薄膜的机理
3. Cathodoluminescence characterization of [1120]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy [J] . K. Kusakabe, T. Furuzuki, K. Ohkawa Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：金属有机气相外延生长在r面蓝宝石衬底上生长的[1120]取向的InGaN / GaN薄膜的阴极发光特性
4. Hetero-epitaxial growth of ZnO thin films on sapphire (1120) substrate by means of AP-HVPE [C] . Kouichi Hashimoto, Naoyuki Takahashi, Takato Nakamura, The Meeting of the Electrochemical Society . 2002

机译：通过AP-HVPE通过AP-HVPE在蓝宝石（1120）衬底上的ZnO薄膜的杂外延生长
5. Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates. [D] . Sunder, Madhana. 2009

机译：在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
6. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications [O] . Florian Bartoli, Jérémy Streque, Jaafar Ghanbaja, 2020

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜
7. GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting [O] . -1

机译：GaN薄膜沉积在蓝宝石基材上溅射涂有ALN，然后是单层石墨烯用于固态照明
8. Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and(0112) Sapphire Substrates [R] . Sun, C. J., Razeghi, M. 1993

机译：（0001）和（0112）蓝宝石衬底上GaN薄膜物理性质的比较

Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate

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